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题名作者发表日期▼ 全文
Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate [会议论文]Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo)2011
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer [会议论文]Pan X (Pan Xu); Wei M (Wei Meng); Yang CB (Yang Cuibai); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang)2011
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate [期刊论文]Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo)2007
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer [期刊论文]Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo)2007
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD [期刊论文]Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo)2007
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure [期刊论文]Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)2006
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC [期刊论文]Wang Xiaoliang; Hu Guoxin; Ma Zhiyong; Xiao Hongling; Wang Cuimei; Luo Weijun; Liu Xinyu; Chen Xiaojuan; Li Jianping; Li Jinmin; Qian He; Wang Zhanguo2006
X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD [期刊论文]Wang Xiaoliang; Liu Xinyu; Hu Guoxin; Wang Junxi; Ma Zhiyong; Wang Cuimei; Li Jianping; Ran Junxue; Zheng Yingkui; Qian He; Zeng Yiping; Li Jinmin2005

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