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题名作者发表日期▼ 全文
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer [期刊论文]Pan X; Wei M; Yang CB; Xiao HL; Wang CM; Wang XL2011
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition [期刊论文]Wei M; Wang XL; Xiao HL; Wang CM; Pan X; Hou QF; Wang ZG2011
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN [期刊论文]Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Deng QW; Li JM; Wang ZG; Hou X2011
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN [期刊论文]Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG2011
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell [期刊论文]Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Bi Y; Li JM; Wang ZG; Hou X2011
Theoretical study on InxGa1-xN/GaN quantum dots solar cell [期刊论文]Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Li JM; Wang ZG; Hou X2011
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy [期刊论文]Pan X; Wang XL; Xiao HL; Wang CM; Yang CB; Li W; Wang WY; Jin P; Wang ZG2011
An investigation on InxGa1-xN/GaN multiple quantum well solar cells [期刊论文]Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X2011
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors [期刊论文]Lin DF; Wang XL; Xiao HL; Wang CM; Jiang LJ; Feng C; Chen H; Hou QF; Deng QW; Bi Y; Kang H2011
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure [期刊论文]Bi Y; Wang XL; Yang CB; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ2011

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