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题名作者发表日期▼ 全文
New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode [期刊论文]Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu; Yao Xing; Liqun Zhang; Heng Long; Mo Li2017
Suppression of optical field leakage to GaN substrate in GaN-based green laser diode [期刊论文]Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu; Yao Xing; Liqun Zhang; Heng Long; Jian Zhang2017
Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells [期刊论文]Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiang Li; Feng Liang; Shuangtao Liu; Yao Xing; Heng Long; Mo Li2017
Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination [期刊论文]Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiang Li; Feng Liang; Shuangtao Liu; Yao Xing; Liqun Zhang; Mo Li; Jian Zhang2017
Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer [期刊论文]Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu; Yao Xing; Liqun Zhang; Hui Yang; Heng Long; Mo Li2017

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