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题名作者发表日期▼ 全文
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer [期刊论文]Pan X; Wei M; Yang CB; Xiao HL; Wang CM; Wang XL2011
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition [期刊论文]Wei M; Wang XL; Xiao HL; Wang CM; Pan X; Hou QF; Wang ZG2011
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy [期刊论文]Pan X; Wang XL; Xiao HL; Wang CM; Yang CB; Li W; Wang WY; Jin P; Wang ZG2011
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates [期刊论文]Wei M; Wang XL; Pan X; Xiao HL; Wang CM; Yang CB; Wang ZG2011
Surface characterization of AlGaN grown on Si (111) substrates [期刊论文]Pan X; Wang XL; Xiao HL; Wang CM; Feng C; Jiang LJ; Yin HB; Chen H2011

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