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题名作者发表日期▼ 全文
Different annealing temperature suitable for different Mg doped P-GaN [期刊论文]S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang; P. Chen; J.J. Zhu; Z.S. Liu; X. Li; W. Liu; L.Q. Zhang; H. Long; M. Li2017
Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes [期刊论文]P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li; J. Yang; J. J. Zhu; Z. S. Liu; X. J. Li; W. Liu; X. Li; F. Liang; J. P. Liu; B. S. Zhang; H. Yang2017
Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold [期刊论文]X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; W. LIU; X. G. HE; X. J. LI; F. LIANG; S. T. LIU; Y. XING; L. Q. ZHANG; M. LI; J. ZHANG2017
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes [期刊论文]P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du2016
Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD [期刊论文]F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du2016
Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs [期刊论文]J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; J.P. Liu; L.Q. Zhang; H. Yang; Y.T. Zhang; G.T. Du2016
Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes [期刊论文]J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang; Y. T. Zhang; G. T. Du2016
GaN high electron mobility transistors with AlInN back barriers [期刊论文]X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang2016
Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells [期刊论文]X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du2016
Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC [期刊论文]F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du2016

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