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题名作者发表日期▼ 全文
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN [期刊论文]Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Deng QW; Li JM; Wang ZG; Hou X2011
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell [期刊论文]Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Bi Y; Li JM; Wang ZG; Hou X2011
Theoretical study on InxGa1-xN/GaN quantum dots solar cell [期刊论文]Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Li JM; Wang ZG; Hou X2011
An investigation on InxGa1-xN/GaN multiple quantum well solar cells [期刊论文]Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X2011
High-quality GaN grown by gas-source MBE [期刊论文]Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY2001
High-quality GaN grown by gas-source MBE [会议论文]Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY2001
GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N configuration [期刊论文]Wang XL; Sun DZ; Kong MY; Hou X; Zeng YP1997
Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells [期刊论文]Wang XL; Sun DZ; Kong MY; Hou X; Zeng YP1997
GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells [期刊论文]Wang XL; Sun DZ; Kong MY; Hou X; Zeng YP1996
CALCULATION OF TEMPORAL RESPONSE FOR FIELD-ASSISTED INP/INGAASP/INP SEMICONDUCTOR PHOTOCATHODES [期刊论文]LI JM; GUO LH; HOU X1992

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