高级检索   注册
SEMI OpenIR

检索


检索到的条目: 11条检索结果中的1-10条条目

条数/页:   其他排序方式:
题名作者发表日期▼ 全文
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition [期刊论文]Wei M; Wang XL; Xiao HL; Wang CM; Pan X; Hou QF; Wang ZG2011
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage [期刊论文]Zhang XB; Wang XL; Xiao HL; Yang CB; Hou QF; Yin HB; Chen H; Wang ZG2011
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN [期刊论文]Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Deng QW; Li JM; Wang ZG; Hou X2011
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN [期刊论文]Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG2011
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell [期刊论文]Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Bi Y; Li JM; Wang ZG; Hou X2011
Theoretical study on InxGa1-xN/GaN quantum dots solar cell [期刊论文]Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Li JM; Wang ZG; Hou X2011
An investigation on InxGa1-xN/GaN multiple quantum well solar cells [期刊论文]Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X2011
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors [期刊论文]Lin DF; Wang XL; Xiao HL; Wang CM; Jiang LJ; Feng C; Chen H; Hou QF; Deng QW; Bi Y; Kang H2011
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations [期刊论文]Gai YQ; Li JB; Hou QF; Wang XL; Xiao HL; Wang CM; Li JM2009
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application [期刊论文]Wang XL; Chen TS; Xiao HL; Tang J; Ran JX; Zhang ML; Feng C; Hou QF; Wei M; Jiang LJ; Li JM; Wang ZG2009

1 2 下一页

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发