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题名作者发表日期▼ 全文
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN [期刊论文]Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Deng QW; Li JM; Wang ZG; Hou X2011
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell [期刊论文]Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Bi Y; Li JM; Wang ZG; Hou X2011
Theoretical study on InxGa1-xN/GaN quantum dots solar cell [期刊论文]Deng QW; Wang XL; Yang CB; Xiao HL; Wang CM; Yin HB; Hou QF; Li JM; Wang ZG; Hou X2011
An investigation on InxGa1-xN/GaN multiple quantum well solar cells [期刊论文]Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X2011
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors [期刊论文]Lin DF; Wang XL; Xiao HL; Wang CM; Jiang LJ; Feng C; Chen H; Hou QF; Deng QW; Bi Y; Kang H2011
An investigation on In(x)Ga(1-x)N/GaN multiple quantum well solar cells [期刊论文]Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X2011
Comparison of as-grown and annealed GaN/InGaN:Mg samples [期刊论文]Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X2011

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