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题名作者发表日期▼ 全文
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition [期刊论文]Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG2011
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots [期刊论文]Zhou XL; Chen YH; Li TF; Zhou GY; Zhang HY; Ye XL; Xu B; Wang ZG2011
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings [期刊论文]Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG2011
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment [期刊论文]Zhou XL; Chen YH; Zhang HY; Zhou GY; Li TF; Liu JQ; Ye XL; Xu B; Wang ZG2011
Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures [期刊论文]Yin CM; Tang N; Zhang S; Duan JX; Xu FJ; Song J; Mei FH; Wang XQ; Shen B; Chen YH; Yu JL; Ma H2011
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells [期刊论文]Yu JL; Chen YH; Jiang CY; Liu Y; Ma H2011
Photorefractive effects in ZnO nanorod doped liquid crystal cell [期刊论文]Guo YB; Chen YH; Xiang Y; Qu SC; Wang ZG2011
Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer [期刊论文]Li TF; Chen YH; Lei W; Zhou XL; Wang ZG2011
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing [期刊论文]Zhou GY; Chen YH; Yu JL; Zhou XL; Ye XL; Jin P; Wang ZG2011
Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system [期刊论文]Jiang CY; Chen YH; Ma H; Yu JL; Liu Y2011

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