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题名作者发表日期▼ 全文
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage [期刊论文]Zhang XB; Wang XL; Xiao HL; Yang CB; Hou QF; Yin HB; Chen H; Wang ZG2011
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics [期刊论文]Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H2011
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts [期刊论文]Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG2011
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors [期刊论文]Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG2011
An investigation on InxGa1-xN/GaN multiple quantum well solar cells [期刊论文]Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X2011
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors [期刊论文]Lin DF; Wang XL; Xiao HL; Wang CM; Jiang LJ; Feng C; Chen H; Hou QF; Deng QW; Bi Y; Kang H2011
Surface characterization of AlGaN grown on Si (111) substrates [期刊论文]Pan X; Wang XL; Xiao HL; Wang CM; Feng C; Jiang LJ; Yin HB; Chen H2011
Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures [期刊论文]Zhao JZ; Lin ZJ; Corrigan TD; Zhang Y; Lu YJ; Lu W; Wang ZG; Chen H2009
Method for measurement of lattice parameter of cubic GaN layers on GaAs (001) [期刊论文]Zheng XH; Wang YT; Feng ZH; Yang H; Chen H; Zhou JM; Liang JW2003
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers [期刊论文]Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J1999

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