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Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 10, 页码: Article no.103507
Authors:  Wei Y;  Ma WQ;  Huang JL;  Zhang YH;  Huo YH;  Cui K;  Chen LH;  Shi YL;  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. wqma@semi.ac.cn
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