Chinese | English

Search in the results

SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-4 of 4 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
A geometrical model of GaN morphology in initial growth stage 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 1, 页码: 115-120
Authors:  Yuan HR;  Chen Z;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(143Kb)  |  Favorite  |  View/Download：924/334  |  Submit date：2010/08/12
Computer Simulation  Crystal Morphology  Atomic Force Microscopy  Nitrides  Ain Buffer Layer  Sapphire  
Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 1-3, 页码: 77-84
Authors:  Lu Y;  Liu XL;  Lu DC;  Yuan HR;  Chen Z;  Fan TW;  Li YF;  Han PD;  Wang XH;  Wang D;  Wang ZG;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(278Kb)  |  Favorite  |  View/Download：1133/359  |  Submit date：2010/08/12
Substrates  Heteroepitaxy  Metalorganic Chemical Vapor Deposition  Gallium Compounds  Nitrides  Intermediate Layer  Epitaxial-growth  Silicon  Sapphire  Film  
Indium doping effect on GaN in the initial growth stage 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2001, 卷号: 30, 期号: 8, 页码: 977-979
Authors:  Yuan HR;  Lu DC;  Liu XL;  Chen Z;  Wang XH;  Wang D;  Han PD;  Yuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(209Kb)  |  Favorite  |  View/Download：932/327  |  Submit date：2010/08/12
Gan  Indium Doping  Initial Growth Stage  Morphology  Optical Transmission  Photoluminescence  Vapor-phase Epitaxy  Buffer Layer  Films  Sapphire  Deposition  
Microstructure evolution of GaN buffer layer on MgAl2O4 substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 478-483
Authors:  Yang HF;  Han PD;  Cheng LS;  Zhang Z;  Duan SK;  Teng XG;  Han PD,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(1003Kb)  |  Favorite  |  View/Download：907/224  |  Submit date：2010/08/12
Gan  Mgal2o4  Buffer Layer  Threading Dislocation  Laser-diodes  Transmission Electron Microscopy  Grown Gan  Chemical-vapor-deposition  Films  Sapphire  Nitride  Defects