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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [4]
Authors
韩培德 [4]
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Journal ar... [4]
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2002 [2]
2001 [1]
1998 [1]
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A geometrical model of GaN morphology in initial growth stage
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 1, 页码: 115-120
Authors:
Yuan HR
;
Chen Z
;
Lu DC
;
Liu XL
;
Han PD
;
Wang XH
;
Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(143Kb)
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View/Download:956/334
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Submit date:2010/08/12
Computer Simulation
Crystal Morphology
Atomic Force Microscopy
Nitrides
Ain Buffer Layer
Sapphire
Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 1-3, 页码: 77-84
Authors:
Lu Y
;
Liu XL
;
Lu DC
;
Yuan HR
;
Chen Z
;
Fan TW
;
Li YF
;
Han PD
;
Wang XH
;
Wang D
;
Wang ZG
;
Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(278Kb)
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View/Download:1182/359
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Submit date:2010/08/12
Substrates
Heteroepitaxy
Metalorganic Chemical Vapor Deposition
Gallium Compounds
Nitrides
Intermediate Layer
Epitaxial-growth
Silicon
Sapphire
Film
Indium doping effect on GaN in the initial growth stage
期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2001, 卷号: 30, 期号: 8, 页码: 977-979
Authors:
Yuan HR
;
Lu DC
;
Liu XL
;
Chen Z
;
Wang XH
;
Wang D
;
Han PD
;
Yuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(209Kb)
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View/Download:958/327
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Submit date:2010/08/12
Gan
Indium Doping
Initial Growth Stage
Morphology
Optical Transmission
Photoluminescence
Vapor-phase Epitaxy
Buffer Layer
Films
Sapphire
Deposition
Microstructure evolution of GaN buffer layer on MgAl2O4 substrate
期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 478-483
Authors:
Yang HF
;
Han PD
;
Cheng LS
;
Zhang Z
;
Duan SK
;
Teng XG
;
Han PD,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(1003Kb)
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View/Download:933/224
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Submit date:2010/08/12
Gan
Mgal2o4
Buffer Layer
Threading Dislocation
Laser-diodes
Transmission Electron Microscopy
Grown Gan
Chemical-vapor-deposition
Films
Sapphire
Nitride
Defects