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Void formation and failure in InGaN/AlGaN double heterostructures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 404-412
Authors:  Wang YG;  Li W;  Han PD;  Zhang Z;  Wang YG,Chinese Acad Sci,Inst Phys,Beijing Lab Electron Microscopy,POB 603,Beijing 100080,Peoples R China.
Adobe PDF(552Kb)  |  Favorite  |  View/Download:912/266  |  Submit date:2010/08/12
Defects  Metalorganic Vapor Phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Light Emitting Diodes  Light-emitting-diodes  Multiple-quantum Wells  Threading Edge Dislocation  Vapor-phase Epitaxy  N-type Gan  Gallium Nitride  Growth Stoichiometry  Scattering  Defects  Luminescence  
Microstructure evolution of GaN buffer layer on MgAl2O4 substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 478-483
Authors:  Yang HF;  Han PD;  Cheng LS;  Zhang Z;  Duan SK;  Teng XG;  Han PD,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(1003Kb)  |  Favorite  |  View/Download:873/224  |  Submit date:2010/08/12
Gan  Mgal2o4  Buffer Layer  Threading Dislocation  Laser-diodes  Transmission Electron Microscopy  Grown Gan  Chemical-vapor-deposition  Films  Sapphire  Nitride  Defects