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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [29]
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徐波 [29]
叶小玲 [12]
金鹏 [9]
李成明 [4]
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Evolution of InAs nanostructures grown by droplet epitaxy
期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 3, 页码: Art.No.033112
Authors:
Zhao C
;
Chen YH
;
Xu B
;
Jin P
;
Wang ZG
;
Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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View/Download:1098/379
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Submit date:2010/03/29
Quantum Dots
Selective growth of InAs islands on patterned GaAs (100) substrate
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2006, 卷号: 39, 期号: 5, 页码: 446-453
Authors:
Cui CX
;
Chen YH
;
Ren YY
;
Xu B
;
Jin P
;
Zhao C
;
Wang ZG
;
Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: cxcui@red.semi.ac.cn
Adobe PDF(1702Kb)
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Submit date:2010/04/11
Patterned Substrate
Molecular Beam Epitaxy
Quantum Dots
Inas
Gaas
Ingaas
Assembled Quantum Dots
Molecular-beam Epitaxy
Fabrication
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 33, 期号: 1, 页码: 207-210
Authors:
Yu LK
;
Xu B
;
Wang ZG
;
Chen YH
;
Jin P
;
Zhao C
;
Sun J
;
Ding F
;
Hu LJ
;
Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yulike@red.semi.ac.cn
Adobe PDF(164Kb)
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View/Download:1082/354
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Submit date:2010/04/11
Growth Interruption
In Segregation
Surface Oxide
Molecular Beam Epitaxy
Quantum Dots
Molecular-beam Epitaxy
Gaas
Photoluminescence
Layer
Shape
Size
Cleaved-edge overgrowth of aligned InAs islands on GaAs(110)
期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 11, 页码: 2661-2664
Authors:
Cui CX
;
Chen YH
;
Zhao C
;
Jin P
;
Shi GX
;
Wang YL
;
Xu B
;
Wang ZG
;
Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(347Kb)
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View/Download:1006/320
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Submit date:2010/03/17
Quantum Dots
Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
Authors:
Cui CX
;
Chen YH
;
Zhang CL
;
Jin P
;
Xu B
;
Shi GX
;
Zhao C
;
Wang ZG
;
Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(598Kb)
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View/Download:1014/313
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Submit date:2010/03/29
Quantum Dots
Size evolution and optical properties of self-assembled InAs quantum dots on different matrix
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 卷号: 19, 期号: 3, 页码: 292-297
Authors:
He J
;
Xu B
;
Wang ZG
;
Qu SC
;
Liu FQ
;
Zhu TW
;
He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(247Kb)
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View/Download:911/233
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Submit date:2010/08/12
Self-assembled
Mbe
Quantum Dots
Photoluminescence
1.3 Mu-m
Temperature-dependence
Excited-states
Inxga1-xas
Lasers
Inp
The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
Authors:
Zhang ZY
;
Jin P
;
Li CM
;
Ye XL
;
Meng XQ
;
Xu B
;
Liu FQ
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(182Kb)
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View/Download:1195/327
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Submit date:2010/08/12
Low Dimensional Structures
Nanostructures
Quantum Dots
Molecular Beam Epitaxy
Semiconducting Iii-v Materials
Laser Diode
Time-resolved Photoluminescence
A novel application to quantum dot materials to the active region of superluminescent diodes
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:
Zhang ZY
;
Meng XQ
;
Jin P
;
Li CM
;
Qu SC
;
Xu B
;
Ye XL
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(195Kb)
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View/Download:1012/369
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Submit date:2010/08/12
Atomic Force Microscopy
Low Dimensional Structures
Quantum Dots
Strain
Molecular Beam Epitaxy
Superluminescent Diodes
1.3 Mu-m
High-power
Integrated Absorber
Inas Islands
Spectrum
Window
Layer
Size
Influence of strain on annealing effects of In(Ga)As quantum dots
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 244, 期号: 2, 页码: 136-141
Authors:
Zhang YC
;
Wang ZG
;
Xu B
;
Liu FQ
;
Chen YH
;
Dowd P
;
Zhang YC,Nanyang Technol Univ,Sch Elect & Elect Engn,Photon Lab 1,Nanyang Ave,Singapore 639798,Singapore.
Adobe PDF(186Kb)
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View/Download:947/269
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Submit date:2010/08/12
Low Dimensional Structures
Strain
Molecular Beam Epitaxy
Quantum Dots
Electronic-structure
Photoluminescence
Interdiffusion
Transitions
Spectra
Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 3-4, 页码: 432-438
Authors:
Meng XQ
;
Xu B
;
Jin P
;
Ye XL
;
Zhang ZY
;
Li CM
;
Wang ZG
;
Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)
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View/Download:858/270
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Submit date:2010/08/12
Low Dimensional Structures
Molecular Beam Epitaxy
Quantum Dots
Semiconducting Iii-v Materials
Photoluminescence