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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [11]
中科院半导体材料科学... [1]
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徐波 [12]
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Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:
Zhou XL
;
Chen YH
;
Zhang HY
;
Zhou GY
;
Li TF
;
Liu JQ
;
Ye XL
;
Xu B
;
Wang ZG
;
Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(1941Kb)
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View/Download:1605/395
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Submit date:2011/07/05
Inas Islands
Mu-m
Escape
Gaas
Gaas(100)
Substrate
A novel application to quantum dot materials to the active region of superluminescent diodes
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:
Zhang ZY
;
Meng XQ
;
Jin P
;
Li CM
;
Qu SC
;
Xu B
;
Ye XL
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(195Kb)
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View/Download:1012/369
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Submit date:2010/08/12
Atomic Force Microscopy
Low Dimensional Structures
Quantum Dots
Strain
Molecular Beam Epitaxy
Superluminescent Diodes
1.3 Mu-m
High-power
Integrated Absorber
Inas Islands
Spectrum
Window
Layer
Size
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:
Liu HY
;
Xu B
;
Ding D
;
Chen YH
;
Zhang JF
;
Wu J
;
Wang ZG
;
Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)
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View/Download:957/319
  |  
Submit date:2010/11/15
Low Dimensional Structures
Molecular Beam Epitaxy
Nanomaterials
Inas Islands
Gaas
Growth
Gaas(100)
Thickness
Density
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009
Authors:
Liu HY
;
Xu B
;
Ding D
;
Chen YH
;
Zhang JF
;
Wu J
;
Wang ZG
;
Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(222Kb)
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View/Download:946/275
  |  
Submit date:2010/08/12
Low Dimensional Structures
Molecular Beam Epitaxy
Nanomaterials
Inas Islands
Gaas
Growth
Gaas(100)
Thickness
Density
Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy
期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 卷号: 19, 期号: 1, 页码: 197-201
Authors:
Jiang WH
;
Xu HZ
;
Xu B
;
Zhou W
;
Gong Q
;
Ding D
;
Liang JB
;
Wang ZG
;
Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(818Kb)
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View/Download:1036/302
  |  
Submit date:2010/08/12
Oriented Gaas
Inas Islands
High-index
Surfaces
Temperature
Topography
Strain
Laser
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate
期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:
Sun S
;
Wu J
;
Liu FQ
;
Zu HZ
;
Chen YH
;
Ye XL
;
Jiang WH
;
Xu B
;
Wang ZG
;
Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(152Kb)
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View/Download:836/247
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Submit date:2010/08/12
Molecular-beam Epitaxy
Inas Islands
Inp(001)
Growth
Gaas
Semiconductors
Thickness
Lasers
Ingaas
Size
Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots
期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 9, 页码: 5433-5436
Authors:
Liu HY
;
Xu B
;
Chen YH
;
Ding D
;
Wang ZG
;
Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(276Kb)
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View/Download:1065/296
  |  
Submit date:2010/08/12
Inas Islands
Growth
Gaas
Relaxation
Evolution
Gaas(100)
Thickness
Density
Size
The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 1-2, 页码: 360-363
Authors:
Sun ZZ
;
Wu J
;
Lin F
;
Liu FQ
;
Chen YH
;
Ye XL
;
Jiang WH
;
Li YF
;
Xu B
;
Wang ZG
;
Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(129Kb)
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View/Download:1052/233
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Submit date:2010/08/12
Self-organized Quantum Dots
Inas/in0.53ga0.47as Multilayer
Inp Substrate
Mbe
Molecular-beam-epitaxy
Inas Islands
Growth
Matrix
Gaas
Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum
期刊论文
OPTICAL AND QUANTUM ELECTRONICS, 1999, 卷号: 31, 期号: 12, 页码: 1235-1246
Authors:
Sun ZZ
;
Ding D
;
Gong Q
;
Zhou W
;
Xu B
;
Wang ZG
;
Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(204Kb)
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View/Download:1204/535
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Submit date:2010/08/12
Quantum Dot
Sld
Wide Spectrum
Low-threshold
Inas Islands
Lasers
Gaas
Emission
Ingaas
Layer
Operation
Growth
Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy
期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 1999, 卷号: 15, 期号: 6, 页码: 523-526
Authors:
Jiang WH
;
Xu HZ
;
Xu B
;
Zhou W
;
Gong Q
;
Ding D
;
Liang JB
;
Wang ZG
;
Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(399Kb)
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View/Download:865/242
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Submit date:2010/08/12
Inas Islands
Monolayer Coverage
Self-organization
Room-temperature
Surfaces