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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [12]
Authors
叶小玲 [12]
徐波 [12]
金鹏 [3]
李成明 [3]
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The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
Authors:
Zhang ZY
;
Jin P
;
Li CM
;
Ye XL
;
Meng XQ
;
Xu B
;
Liu FQ
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(182Kb)
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View/Download:1195/327
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Submit date:2010/08/12
Low Dimensional Structures
Nanostructures
Quantum Dots
Molecular Beam Epitaxy
Semiconducting Iii-v Materials
Laser Diode
Time-resolved Photoluminescence
A novel application to quantum dot materials to the active region of superluminescent diodes
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:
Zhang ZY
;
Meng XQ
;
Jin P
;
Li CM
;
Qu SC
;
Xu B
;
Ye XL
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(195Kb)
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View/Download:1012/369
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Submit date:2010/08/12
Atomic Force Microscopy
Low Dimensional Structures
Quantum Dots
Strain
Molecular Beam Epitaxy
Superluminescent Diodes
1.3 Mu-m
High-power
Integrated Absorber
Inas Islands
Spectrum
Window
Layer
Size
Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 3-4, 页码: 432-438
Authors:
Meng XQ
;
Xu B
;
Jin P
;
Ye XL
;
Zhang ZY
;
Li CM
;
Wang ZG
;
Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)
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View/Download:858/270
  |  
Submit date:2010/08/12
Low Dimensional Structures
Molecular Beam Epitaxy
Quantum Dots
Semiconducting Iii-v Materials
Photoluminescence
Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400
Authors:
He J
;
Xu B
;
Wang ZG
;
Qu SC
;
Liu FQ
;
Zhu TW
;
Ye XL
;
Zhao FA
;
Meng XQ
;
He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)
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  |  
View/Download:1103/309
  |  
Submit date:2010/08/12
Photoluminescence
Molecular Beam Epitaxy
Nanomaterials
Quantum Dots
Semiconducting Iii-v Materials
1.3 Mu-m
Temperature-dependence
Excited-states
Inxga1-xas
Growth
Lasers
Inp
Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 3, 页码: 199-204
Authors:
Zhang YC
;
Huang CJ
;
Liu FQ
;
Xu B
;
Ding D
;
Jiang WH
;
Li YF
;
Ye XL
;
Wu J
;
Chen YH
;
Wang ZG
;
Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(233Kb)
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View/Download:1239/424
  |  
Submit date:2010/08/12
Quantum Dots
Inas/gaas
Mbe
Photoluminescence
Absorption
Optical-properties
Photoluminescence
Spectroscopy
Ingaas
Laser
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:
Jiang WH
;
Xu HZ
;
Xu B
;
Ye XL
;
Zhou W
;
Ding D
;
Liang JB
;
Wang ZG
;
Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)
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View/Download:985/285
  |  
Submit date:2010/11/15
Quantum Dots
High Index
Molecular Beam Epitaxy
Photoluminescence
Surface Segregation
Oriented Gaas
Ingaas
Islands
Wells
Disks
Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 1-2, 页码: 356-359
Authors:
Jiang WH
;
Xu HZ
;
Xu B
;
Ye XL
;
Wu J
;
Ding D
;
Liang JB
;
Wang ZG
;
Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(236Kb)
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View/Download:1005/255
  |  
Submit date:2010/08/12
Rapid Thermal Annealing
Ingaas/gaas
Quantum Dots
Molecular Beam Epitaxy
Luminescence
Fabrication
Gaas(100)
Interface
Laser
Layer
Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21
Authors:
Li YF
;
Liu FQ
;
Xu B
;
Ye XL
;
Ding D
;
Sun ZZ
;
Jiang WH
;
Liu HY
;
Zhang YC
;
Wang ZG
;
Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(280Kb)
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View/Download:892/238
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Submit date:2010/08/12
Quantum Dots
Molecular Beam Epitaxy
High Index
Molecular-beam Epitaxy
Strained Islands
Gaas
Organization
Inp(001)
Lasers
Ingaas
Layer
Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
期刊论文
APPLIED SURFACE SCIENCE, 2000, 卷号: 167, 期号: 3-4, 页码: 191-196
Authors:
Li YF
;
Ye XL
;
Liu FQ
;
Xu B
;
Ding D
;
Jiang WH
;
Sun ZZ
;
Liu HY
;
Zhang YC
;
Wang ZG
;
Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(1149Kb)
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View/Download:861/232
  |  
Submit date:2010/08/12
Self-assembled Quantum Dots
Molecular Beam Epitaxy
High Index
Molecular-beam Epitaxy
Vapor-phase Epitaxy
Quantum Dots
Islands
Inp(001)
Ingaas
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 134-140
Authors:
Jiang WH
;
Xu HZ
;
Xu B
;
Ye XL
;
Zhou W
;
Ding D
;
Liang JB
;
Wang ZG
;
Jiang WH,Chinese Acad Sci,Inst Semicond,Inst Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(320Kb)
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Favorite
  |  
View/Download:903/225
  |  
Submit date:2010/08/12
Quantum Dots
High Index
Molecular Beam Epitaxy
Photoluminescence
Surface Segregation
Oriented Gaas
Ingaas
Islands
Wells
Disks