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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [8]
Authors
叶小玲 [8]
徐波 [7]
梁松 [1]
潘教青 [1]
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Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 2, 页码: 477-484
Authors:
Liang S
;
Zhu HL
;
Pan JQ
;
Ye XL
;
Wang W
;
Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn
Adobe PDF(399Kb)
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View/Download:914/293
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Submit date:2010/04/11
Bimodal Size Distribution
Metalorganic Vapor Phase Epitaxy
Self-assembled Quantum Dots
Indium Arsenide
Phase-epitaxy
Islands
Ingaas
Size
Laser
InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy
期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 89, 期号: 7, 页码: 4186-4188
Authors:
Li YF
;
Wang JZ
;
Ye XL
;
Xu B
;
Liu FQ
;
Ding D
;
Zhang JF
;
Wang ZG
;
Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(143Kb)
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View/Download:906/277
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Submit date:2010/08/12
Matrix
Islands
Ingaas
Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 3, 页码: 199-204
Authors:
Zhang YC
;
Huang CJ
;
Liu FQ
;
Xu B
;
Ding D
;
Jiang WH
;
Li YF
;
Ye XL
;
Wu J
;
Chen YH
;
Wang ZG
;
Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(233Kb)
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View/Download:1239/424
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Submit date:2010/08/12
Quantum Dots
Inas/gaas
Mbe
Photoluminescence
Absorption
Optical-properties
Photoluminescence
Spectroscopy
Ingaas
Laser
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:
Jiang WH
;
Xu HZ
;
Xu B
;
Ye XL
;
Zhou W
;
Ding D
;
Liang JB
;
Wang ZG
;
Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)
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View/Download:985/285
  |  
Submit date:2010/11/15
Quantum Dots
High Index
Molecular Beam Epitaxy
Photoluminescence
Surface Segregation
Oriented Gaas
Ingaas
Islands
Wells
Disks
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate
期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:
Sun S
;
Wu J
;
Liu FQ
;
Zu HZ
;
Chen YH
;
Ye XL
;
Jiang WH
;
Xu B
;
Wang ZG
;
Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(152Kb)
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View/Download:836/247
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Submit date:2010/08/12
Molecular-beam Epitaxy
Inas Islands
Inp(001)
Growth
Gaas
Semiconductors
Thickness
Lasers
Ingaas
Size
Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21
Authors:
Li YF
;
Liu FQ
;
Xu B
;
Ye XL
;
Ding D
;
Sun ZZ
;
Jiang WH
;
Liu HY
;
Zhang YC
;
Wang ZG
;
Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(280Kb)
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View/Download:892/238
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Submit date:2010/08/12
Quantum Dots
Molecular Beam Epitaxy
High Index
Molecular-beam Epitaxy
Strained Islands
Gaas
Organization
Inp(001)
Lasers
Ingaas
Layer
Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
期刊论文
APPLIED SURFACE SCIENCE, 2000, 卷号: 167, 期号: 3-4, 页码: 191-196
Authors:
Li YF
;
Ye XL
;
Liu FQ
;
Xu B
;
Ding D
;
Jiang WH
;
Sun ZZ
;
Liu HY
;
Zhang YC
;
Wang ZG
;
Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(1149Kb)
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View/Download:861/232
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Submit date:2010/08/12
Self-assembled Quantum Dots
Molecular Beam Epitaxy
High Index
Molecular-beam Epitaxy
Vapor-phase Epitaxy
Quantum Dots
Islands
Inp(001)
Ingaas
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 134-140
Authors:
Jiang WH
;
Xu HZ
;
Xu B
;
Ye XL
;
Zhou W
;
Ding D
;
Liang JB
;
Wang ZG
;
Jiang WH,Chinese Acad Sci,Inst Semicond,Inst Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(320Kb)
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View/Download:903/225
  |  
Submit date:2010/08/12
Quantum Dots
High Index
Molecular Beam Epitaxy
Photoluminescence
Surface Segregation
Oriented Gaas
Ingaas
Islands
Wells
Disks