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Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 2, 页码: 477-484
Authors:  Liang S;  Zhu HL;  Pan JQ;  Ye XL;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn
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Bimodal Size Distribution  Metalorganic Vapor Phase Epitaxy  Self-assembled Quantum Dots  Indium Arsenide  Phase-epitaxy  Islands  Ingaas  Size  Laser  
InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 89, 期号: 7, 页码: 4186-4188
Authors:  Li YF;  Wang JZ;  Ye XL;  Xu B;  Liu FQ;  Ding D;  Zhang JF;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Matrix  Islands  Ingaas  
Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 3, 页码: 199-204
Authors:  Zhang YC;  Huang CJ;  Liu FQ;  Xu B;  Ding D;  Jiang WH;  Li YF;  Ye XL;  Wu J;  Chen YH;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(233Kb)  |  Favorite  |  View/Download：1239/424  |  Submit date：2010/08/12
Quantum Dots  Inas/gaas  Mbe  Photoluminescence  Absorption  Optical-properties  Photoluminescence  Spectroscopy  Ingaas  Laser  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:  Sun S;  Wu J;  Liu FQ;  Zu HZ;  Chen YH;  Ye XL;  Jiang WH;  Xu B;  Wang ZG;  Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Inas Islands  Inp(001)  Growth  Gaas  Semiconductors  Thickness  Lasers  Ingaas  Size  
Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21
Authors:  Li YF;  Liu FQ;  Xu B;  Ye XL;  Ding D;  Sun ZZ;  Jiang WH;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Strained Islands  Gaas  Organization  Inp(001)  Lasers  Ingaas  Layer  
Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates 期刊论文
APPLIED SURFACE SCIENCE, 2000, 卷号: 167, 期号: 3-4, 页码: 191-196
Authors:  Li YF;  Ye XL;  Liu FQ;  Xu B;  Ding D;  Jiang WH;  Sun ZZ;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-assembled Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Vapor-phase Epitaxy  Quantum Dots  Islands  Inp(001)  Ingaas  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 134-140
Authors:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Inst Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks