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Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 3, 页码: 279-282
Authors:  Zhao H;  Xu YQ;  Ni HQ;  Zhang SY;  Han Q;  Du Y;  Yang XH;  Wu RH;  Niu ZC;  Zhao, H, Chinese Acad Sci, Inst Semicond, Natl Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail:
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Molecular-beam Epitaxy  Improved Luminescence Efficiency  Quantum-wells  Origin