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Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4, 页码: Art. No. 041901
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Wang H;  Zhang SM;  Wang YT;  Yang H;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(203Kb)  |  Favorite  |  View/Download：1401/438  |  Submit date：2010/03/08
Edge Dislocations  Gallium Compounds  Iii-v Semiconductors  Impurities  Photoluminescence  Semiconductor Doping  Semiconductor Thin Films  Silicon  Wide Band Gap Semiconductors  X-ray Diffraction  
Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 4, 页码: Art.No.041903
Authors:  Wang YJ;  Xu SJ;  Li Q;  Zhao DG;  Yang H;  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
Adobe PDF(77Kb)  |  Favorite  |  View/Download：1486/522  |  Submit date：2010/04/11
Photoluminescence  Luminescence  
Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 225, 期号: 1, 页码: 45-49
Authors:  Fu Y;  Yang H;  Zhao DG;  Zheng XH;  Li SF;  Sun YP;  Feng ZH;  Wang YT;  Duan LH;  Fu Y,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)  |  Favorite  |  View/Download：1289/437  |  Submit date：2010/08/12
Photoluminescence  Sem  Epitaxial Lateral Overgrowth  Metalorganic Chemical Vapor Deposition  Cubic Gan  Phase Epitaxy  Selective Growth  Laser-diodes  Layers  
Pulsed excimer laser annealing of Mg-doped cubic GaN 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 209, 期号: 1, 页码: 203-207
Authors:  Xu DP;  Yang H;  Li SF;  Zhao DG;  Ge H;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(136Kb)  |  Favorite  |  View/Download：989/356  |  Submit date：2010/08/12
Annealing  Cubic Gan  Mg Doping  Photoluminescence  Molecular-beam Epitaxy  Iii-v Nitride  P-type Gan  Optical-properties  Compensation  Diodes  Films  
Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition 期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 76, 期号: 21, 页码: 3025-3027
Authors:  Xu DP;  Yang H;  Li JB;  Zhao DG;  Li SF;  Zhuang SM;  Wu RH;  Chen Y;  Li GH;  Yang H,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Photoluminescence  
Effect of Si doping on cubic GaN films grown on GaAs(100) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 206, 期号: 1-2, 页码: 150-154
Authors:  Xu DP;  Yang H;  Li JB;  Li SF;  Wang YT;  Zhao DG;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(118Kb)  |  Favorite  |  View/Download：1009/284  |  Submit date：2010/08/12
Gan  Cubic  Hexagonal  Photoluminescence  Doped Gan  Xrd  Silicon  Light-emitting Diodes  Semiconductors  Sapphire