×
验证码:
换一张
Forgotten Password?
Stay signed in
×
Log In
Chinese
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
Title
Creator
Subject Area
Keyword
Document Type
Source Publication
Indexed By
Publisher
Date Issued
Date Accessioned
Funding Project
MOST Discipline Catalogue
Study Hall
Image search
Paste the image URL
Home
Collections
Authors
DocType
Subjects
K-Map
News
Search in the results
Collection
中国科学院半导体研究... [6]
Authors
赵德刚 [6]
江德生 [1]
朱建军 [1]
王玉田 [1]
张书明 [1]
Document Type
Journal ar... [6]
Date Issued
2009 [1]
2006 [1]
2001 [1]
2000 [2]
1999 [1]
Language
英语 [6]
Source Publication
APPLIED PH... [3]
JOURNAL OF... [3]
Funding Project
Indexed By
SCI [6]
Funding Organization
National N... [1]
×
Knowledge Map
SEMI OpenIR
Start a Submission
Submissions
Unclaimed
Claimed
Attach Fulltext
Bookmarks
QQ
Weibo
Feedback
(Note: the search results are based on claimed items)
Browse/Search Results:
1-6 of 6
Help
Filters
Author:赵德刚
First author
Selected(
0
)
Clear
Items/Page:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Sort:
Select
Submit date Ascending
Submit date Descending
Title Ascending
Title Descending
Journal Impact Factor Ascending
Journal Impact Factor Descending
Issue Date Ascending
Issue Date Descending
Author Ascending
Author Descending
WOS Cited Times Ascending
WOS Cited Times Descending
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4, 页码: Art. No. 041901
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Liu ZS
;
Wang H
;
Zhang SM
;
Wang YT
;
Yang H
;
Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(203Kb)
  |  
Favorite
  |  
View/Download:1401/438
  |  
Submit date:2010/03/08
Edge Dislocations
Gallium Compounds
Iii-v Semiconductors
Impurities
Photoluminescence
Semiconductor Doping
Semiconductor Thin Films
Silicon
Wide Band Gap Semiconductors
X-ray Diffraction
Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers
期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 4, 页码: Art.No.041903
Authors:
Wang YJ
;
Xu SJ
;
Li Q
;
Zhao DG
;
Yang H
;
Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
Adobe PDF(77Kb)
  |  
Favorite
  |  
View/Download:1486/522
  |  
Submit date:2010/04/11
Photoluminescence
Luminescence
Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 225, 期号: 1, 页码: 45-49
Authors:
Fu Y
;
Yang H
;
Zhao DG
;
Zheng XH
;
Li SF
;
Sun YP
;
Feng ZH
;
Wang YT
;
Duan LH
;
Fu Y,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)
  |  
Favorite
  |  
View/Download:1289/437
  |  
Submit date:2010/08/12
Photoluminescence
Sem
Epitaxial Lateral Overgrowth
Metalorganic Chemical Vapor Deposition
Cubic Gan
Phase Epitaxy
Selective Growth
Laser-diodes
Layers
Pulsed excimer laser annealing of Mg-doped cubic GaN
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 209, 期号: 1, 页码: 203-207
Authors:
Xu DP
;
Yang H
;
Li SF
;
Zhao DG
;
Ge H
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(136Kb)
  |  
Favorite
  |  
View/Download:989/356
  |  
Submit date:2010/08/12
Annealing
Cubic Gan
Mg Doping
Photoluminescence
Molecular-beam Epitaxy
Iii-v Nitride
P-type Gan
Optical-properties
Compensation
Diodes
Films
Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition
期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 76, 期号: 21, 页码: 3025-3027
Authors:
Xu DP
;
Yang H
;
Li JB
;
Zhao DG
;
Li SF
;
Zhuang SM
;
Wu RH
;
Chen Y
;
Li GH
;
Yang H,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(42Kb)
  |  
Favorite
  |  
View/Download:968/308
  |  
Submit date:2010/08/12
Molecular-beam Epitaxy
Photoluminescence
Effect of Si doping on cubic GaN films grown on GaAs(100)
期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 206, 期号: 1-2, 页码: 150-154
Authors:
Xu DP
;
Yang H
;
Li JB
;
Li SF
;
Wang YT
;
Zhao DG
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(118Kb)
  |  
Favorite
  |  
View/Download:1009/284
  |  
Submit date:2010/08/12
Gan
Cubic
Hexagonal
Photoluminescence
Doped Gan
Xrd
Silicon
Light-emitting Diodes
Semiconductors
Sapphire