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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [11]
Authors
赵德刚 [11]
张书明 [6]
江德生 [3]
朱建军 [3]
王玉田 [2]
李辛毅 [1]
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Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 14, 页码: Art. No. 145410
Authors:
Wang H
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(853Kb)
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View/Download:1273/426
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Submit date:2010/03/08
Molecular-beam Epitaxy
Phase Epitaxy
Quantum Dots
Band-gap
Growth
Surfaces
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055001
Authors:
Wang H
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(957Kb)
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View/Download:1030/234
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Submit date:2010/03/08
Molecular-beam Epitaxy
Electron-transport
Band-gap
Films
Sapphire
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN
期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.241917
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Liu ZS
;
Zhang SM
;
Liang JW
;
Li X
;
Li XY
;
Gong HM
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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View/Download:1471/646
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Submit date:2010/04/11
Chemical-vapor-deposition
Molecular-beam Epitaxy
X-ray-diffraction
Mg-doped Gan
Undoped Gan
Photoluminescence Bands
Threading Dislocations
Positron-annihilation
Growth Stoichiometry
Gallium Nitride
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
Authors:
Zhang BS
;
Wu M
;
Shen XM
;
Chen J
;
Zhu JJ
;
Liu JP
;
Feng G
;
Zhao DG
;
Wang YT
;
Yang H
;
Zhang BS,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(232Kb)
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View/Download:2006/868
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Submit date:2010/08/12
Metalorganic Chemical Vapor Deposition
Nitrides
Semiconductor Iii-v Materials
Molecular-beam Epitaxy
High-quality Gan
Chemical-vapor-deposition
Intermediate Layer
Alas
Aln
Surfaces
Silicon
Films
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 4, 页码: 677-679
Authors:
Zhao DG
;
Xu SJ
;
Xie MH
;
Tong SY
;
Yang H
;
Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
Adobe PDF(53Kb)
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View/Download:3259/1448
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Submit date:2010/08/12
Vapor-phase Epitaxy
Phonon Deformation Potentials
Molecular-beam Epitaxy
Raman-scattering
Alpha-gan
Aln
Layers
Strain
Wurtzite
Films
MOCVD growth of cubic GaN: Materials and devices
会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
Authors:
Yang H
;
Zhang SM
;
Xu DP
;
Li SF
;
Zhao DG
;
Fu Y
;
Sun YP
;
Feng ZH
;
Zheng LX
;
Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)
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View/Download:1126/238
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Submit date:2010/10/29
Mocvd
Gan
Ingan
Cubic
Led
Chemical-vapor-deposition
Molecular-beam Epitaxy
Gallium Nitride
Phase Epitaxy
Ingan Films
Electroluminescence
Zincblende
Wurtzite
Mbe
Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 6, 页码: 3762-3764
Authors:
Xu DP
;
Wang YT
;
Yang H
;
Li SF
;
Zhao DG
;
Fu Y
;
Zhang SM
;
Wu RH
;
Jia QJ
;
Zheng WL
;
Jiang XM
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(45Kb)
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View/Download:1099/331
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Submit date:2010/08/12
Molecular-beam Epitaxy
Nitride Semiconductors
Stress
Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 87, 期号: 4, 页码: 2064-2066
Authors:
Xu DP
;
Yang H
;
Zhao DG
;
Li SF
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(51Kb)
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View/Download:852/279
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Submit date:2010/08/12
Molecular-beam Epitaxy
Gallium Nitride
Gan Films
Pulsed excimer laser annealing of Mg-doped cubic GaN
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 209, 期号: 1, 页码: 203-207
Authors:
Xu DP
;
Yang H
;
Li SF
;
Zhao DG
;
Ge H
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(136Kb)
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View/Download:976/356
  |  
Submit date:2010/08/12
Annealing
Cubic Gan
Mg Doping
Photoluminescence
Molecular-beam Epitaxy
Iii-v Nitride
P-type Gan
Optical-properties
Compensation
Diodes
Films
Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching
期刊论文
THIN SOLID FILMS, 2000, 卷号: 372, 期号: 1-2, 页码: 25-29
Authors:
Xu D
;
Yang H
;
Zhang SM
;
Zheng LX
;
Zhao DG
;
Li SF
;
Wang YT
;
Wu RH
;
Xu D,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(193Kb)
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View/Download:909/312
  |  
Submit date:2010/08/12
Molecular-beam Epitaxy
Light-emitting-diodes
Yellow Luminescence
Growth
Heterostructure
Nitride