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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [6]
集成光电子学国家重点... [1]
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赵德刚 [7]
张书明 [4]
江德生 [3]
朱建军 [3]
王玉田 [3]
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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Wang YT
;
Jia QJ
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(418Kb)
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View/Download:1771/452
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Submit date:2010/04/04
Nitride Materials
Crystal Growth
X-ray Diffraction
Time-resolved Photoluminescence
Light-emitting-diodes
Piezoelectric Fields
Laser-diodes
Dependence
Recombination
Polarization
Dynamics
Growth
Mocvd
Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 1, 页码: Art. No. 015108
Authors:
Liu WB
;
Zhao DG
;
Sun X
;
Zhang S
;
Jiang DS
;
Wang H
;
Zhang SM
;
Liu ZS
;
Zhu JJ
;
Wang YT
;
Duan LH
;
Yang H
;
Liu WB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wbliu@semi.ac.cn
;
dgzhao@red.semi.ac.cn
Adobe PDF(452Kb)
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View/Download:1303/496
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Submit date:2010/03/08
Surface-morphology
Detectors
Growth
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 14, 页码: Art. No. 145410
Authors:
Wang H
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(853Kb)
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View/Download:1287/426
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Submit date:2010/03/08
Molecular-beam Epitaxy
Phase Epitaxy
Quantum Dots
Band-gap
Growth
Surfaces
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique
期刊论文
SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY, 2003, 卷号: 46, 期号: 4, 页码: 437-440
Authors:
Feng G
;
Zhu JJ
;
Shen XM
;
Zhang BS
;
Zhao DG
;
Wang YT
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(184Kb)
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View/Download:1121/441
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Submit date:2010/08/12
Gan
X-ray Diffraction
Thickness
Sapphire
Growth
Films
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
Authors:
Feng G
;
Shen XM
;
Zhu JJ
;
Zhang BS
;
Zhao DG
;
Wang YT
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(102Kb)
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View/Download:1992/827
  |  
Submit date:2010/08/12
X-ray Diffraction
Metalorganic Vapor Phase Epitaxy
Nitrides
Semiconducting Iii-v Materials
Buffer Layer
Gan
Growth
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
Authors:
Feng G
;
Zheng XH
;
Fu Y
;
Zhu JJ
;
Shen XM
;
Zhang BS
;
Zhao DG
;
Wang YT
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(120Kb)
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View/Download:1201/332
  |  
Submit date:2010/08/12
X-ray Diffraction
Etching
Metalorganic Vapor-phase Epitaxy
Nitrides
Semiconducting Iii-v Materials
Light-emitting-diodes
Vapor-phase Epitaxy
Films
Dislocations
Density
Growth
Layers
Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching
期刊论文
THIN SOLID FILMS, 2000, 卷号: 372, 期号: 1-2, 页码: 25-29
Authors:
Xu D
;
Yang H
;
Zhang SM
;
Zheng LX
;
Zhao DG
;
Li SF
;
Wang YT
;
Wu RH
;
Xu D,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(193Kb)
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View/Download:915/312
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Submit date:2010/08/12
Molecular-beam Epitaxy
Light-emitting-diodes
Yellow Luminescence
Growth
Heterostructure
Nitride