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Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang;  H;  Liu ZS;  Zhang SM;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Nitride Materials  Photoconductivity And Photovoltaics  Computer Simulations  Films  
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055001
Authors:  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
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Molecular-beam Epitaxy  Electron-transport  Band-gap  Films  Sapphire  
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
Authors:  Zhang BS;  Wu M;  Shen XM;  Chen J;  Zhu JJ;  Liu JP;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Zhang BS,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Metalorganic Chemical Vapor Deposition  Nitrides  Semiconductor Iii-v Materials  Molecular-beam Epitaxy  High-quality Gan  Chemical-vapor-deposition  Intermediate Layer  Alas  Aln  Surfaces  Silicon  Films  
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique 期刊论文
SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY, 2003, 卷号: 46, 期号: 4, 页码: 437-440
Authors:  Feng G;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Gan  X-ray Diffraction  Thickness  Sapphire  Growth  Films  
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 4, 页码: 677-679
Authors:  Zhao DG;  Xu SJ;  Xie MH;  Tong SY;  Yang H;  Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Vapor-phase Epitaxy  Phonon Deformation Potentials  Molecular-beam Epitaxy  Raman-scattering  Alpha-gan  Aln  Layers  Strain  Wurtzite  Films  
Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
Authors:  Feng G;  Fu Y;  Xia JS;  Zhu JJ;  Zhang BS;  Shen XM;  Zhao DG;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Vapor-phase Epitaxy  Deposition  Layers  Films  
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth 期刊论文
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
Authors:  Feng G;  Zheng XH;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Sun YP;  Zhang ZH;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Gan  Epitaxial Lateral Overgrowth  Crystallographic Tilt  Double Crystal X-ray Diffraction  Films  Defects  Gaas  
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
Authors:  Feng G;  Zheng XH;  Fu Y;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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X-ray Diffraction  Etching  Metalorganic Vapor-phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Light-emitting-diodes  Vapor-phase Epitaxy  Films  Dislocations  Density  Growth  Layers  
Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2000, 卷号: 29, 期号: 2, 页码: 177-182
Authors:  Xu DP;  Yang H;  Li JB;  Li SF;  Wang YT;  Zhao DG;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100864,Peoples R China.
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Cubic Gan  Hexagonal Gan  Buffer Layer  Afm  Rheed  Cubic Gan  Films  Gaas  Dependence  Nitride  Layers  
Pulsed excimer laser annealing of Mg-doped cubic GaN 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 209, 期号: 1, 页码: 203-207
Authors:  Xu DP;  Yang H;  Li SF;  Zhao DG;  Ge H;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(136Kb)  |  Favorite  |  View/Download:967/356  |  Submit date:2010/08/12
Annealing  Cubic Gan  Mg Doping  Photoluminescence  Molecular-beam Epitaxy  Iii-v Nitride  P-type Gan  Optical-properties  Compensation  Diodes  Films