SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-7 of 7 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 14, 页码: Art. No. 145410
Authors:  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(853Kb)  |  Favorite  |  View/Download:1250/426  |  Submit date:2010/03/08
Molecular-beam Epitaxy  Phase Epitaxy  Quantum Dots  Band-gap  Growth  Surfaces  
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055001
Authors:  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(957Kb)  |  Favorite  |  View/Download:979/234  |  Submit date:2010/03/08
Molecular-beam Epitaxy  Electron-transport  Band-gap  Films  Sapphire  
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.241917
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
Adobe PDF(68Kb)  |  Favorite  |  View/Download:1456/646  |  Submit date:2010/04/11
Chemical-vapor-deposition  Molecular-beam Epitaxy  X-ray-diffraction  Mg-doped Gan  Undoped Gan  Photoluminescence Bands  Threading Dislocations  Positron-annihilation  Growth Stoichiometry  Gallium Nitride  
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
Authors:  Feng ZH;  Yang H;  Zhang SM;  Duan LH;  Wang H;  Wang YT;  Feng ZH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(161Kb)  |  Favorite  |  View/Download:1102/289  |  Submit date:2010/08/12
Crystal Morphology  Doping  Surface Structure  Metalorgamc Chemical Vapor Deposition  Nitrides  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Phase Epitaxy  Films  Cathodoluminescence  
MOCVD growth of cubic GaN: Materials and devices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
Authors:  Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX;  Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)  |  Favorite  |  View/Download:1112/238  |  Submit date:2010/10/29
Mocvd  Gan  Ingan  Cubic  Led  Chemical-vapor-deposition  Molecular-beam Epitaxy  Gallium Nitride  Phase Epitaxy  Ingan Films  Electroluminescence  Zincblende  Wurtzite  Mbe  
Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 6, 页码: 3762-3764
Authors:  Xu DP;  Wang YT;  Yang H;  Li SF;  Zhao DG;  Fu Y;  Zhang SM;  Wu RH;  Jia QJ;  Zheng WL;  Jiang XM;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(45Kb)  |  Favorite  |  View/Download:1065/331  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Nitride Semiconductors  Stress  
Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching 期刊论文
THIN SOLID FILMS, 2000, 卷号: 372, 期号: 1-2, 页码: 25-29
Authors:  Xu D;  Yang H;  Zhang SM;  Zheng LX;  Zhao DG;  Li SF;  Wang YT;  Wu RH;  Xu D,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(193Kb)  |  Favorite  |  View/Download:880/312  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Light-emitting-diodes  Yellow Luminescence  Growth  Heterostructure  Nitride