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Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  Deng Y;  Zhao DG;  Wu LL;  Liu ZS;  Zhu JJ;  Jiang DS;  Zhang SM;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Gan  Ultraviolet And Infrared Photodetector  Quantum Efficiency  Solar-blind  
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:  Wang LJ;  Zhang SM;  Zhu JH;  Zhu JJ;  Zhao DG;  Liu ZS;  Jiang DS;  Wang YT;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
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Gan  Light Emitting Diode  Surface Treatment  Leakage Current  Threading Dislocation Densities  Layers  Ni/au  Leds  
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
Authors:  Sun Q;  Zhang JC;  Huang Y;  Chen J;  Wang JF;  Wang H;  Li DY;  Wang YT;  Zhang SM;  Yang H;  Zhou CL;  Guo LP;  Jia QJ;  Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: qsun@red.semi.ac.cn
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Nitrides  Multiple Quantum Wells  Cracks  Dislocations  Vacancies X-ray Diffraction  X-ray-diffraction  Edge Dislocations  Gan  Films  Superlattices  Relaxation  Strain  
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Shen XM;  Feng G;  Liu JP;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowths  Surface Morphology  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  Light-emitting-diodes  Sapphire Substrate  Nucleation Layers  Quality  Temperature  
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Shen XM;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowth  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  High-quality Gan  Buffer Layer  Threading Dislocations  Temperature  Evolution  Surface  Movpe  
MOCVD growth of cubic GaN: Materials and devices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
Authors:  Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX;  Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)  |  Favorite  |  View/Download:1117/238  |  Submit date:2010/10/29
Mocvd  Gan  Ingan  Cubic  Led  Chemical-vapor-deposition  Molecular-beam Epitaxy  Gallium Nitride  Phase Epitaxy  Ingan Films  Electroluminescence  Zincblende  Wurtzite  Mbe