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Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 3, 页码: Art.No.034903
Authors:  Zhao H;  Xu YQ;  Ni HQ;  Zhang SY;  Wu DH;  Han Q;  Wu RH;  Niu ZC;  Zhao, H, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail:
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Improved Luminescence Efficiency  Optical-properties  Lasers  Nitrogen  Origin  
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 288, 期号: 1, 页码: 40529
Authors:  Jiang DS;  Qu YH;  Ni HQ;  Wu DH;  Xu YQ;  Niu ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail:
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Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iii-v Materials  Mu-m  Lasers  Temperature  Surfactant  Nm  
Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 17, 页码: 2488-2490
Authors:  Li LH;  Pan Z;  Xu YQ;  Du Y;  Lin YW;  Wu RH;  Li LH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(52Kb)  |  Favorite  |  View/Download:841/266  |  Submit date:2010/08/12
1.3 Mu-m  Optical-properties  Band-gap  Superlattices  Lasers  Gaas