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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [11]
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金鹏 [11]
徐波 [9]
李成明 [4]
叶小玲 [3]
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Evolution of InAs nanostructures grown by droplet epitaxy
期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 3, 页码: Art.No.033112
Authors:
Zhao C
;
Chen YH
;
Xu B
;
Jin P
;
Wang ZG
;
Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
Adobe PDF(278Kb)
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View/Download:1097/379
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Submit date:2010/03/29
Quantum Dots
Selective growth of InAs islands on patterned GaAs (100) substrate
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2006, 卷号: 39, 期号: 5, 页码: 446-453
Authors:
Cui CX
;
Chen YH
;
Ren YY
;
Xu B
;
Jin P
;
Zhao C
;
Wang ZG
;
Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: cxcui@red.semi.ac.cn
Adobe PDF(1702Kb)
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View/Download:989/230
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Submit date:2010/04/11
Patterned Substrate
Molecular Beam Epitaxy
Quantum Dots
Inas
Gaas
Ingaas
Assembled Quantum Dots
Molecular-beam Epitaxy
Fabrication
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 33, 期号: 1, 页码: 207-210
Authors:
Yu LK
;
Xu B
;
Wang ZG
;
Chen YH
;
Jin P
;
Zhao C
;
Sun J
;
Ding F
;
Hu LJ
;
Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yulike@red.semi.ac.cn
Adobe PDF(164Kb)
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View/Download:1082/354
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Submit date:2010/04/11
Growth Interruption
In Segregation
Surface Oxide
Molecular Beam Epitaxy
Quantum Dots
Molecular-beam Epitaxy
Gaas
Photoluminescence
Layer
Shape
Size
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
期刊论文
JOURNAL OF LUMINESCENCE, 2006, 卷号: 119, 期号: 0, 页码: 183-187
Authors:
Wang FZ
;
Chen ZH
;
Sun J
;
Bai LH
;
Huang SH
;
Xiong H
;
Jin P
;
Wang ZG
;
Shen SC
;
Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. E-mail: zhanghai@fudan.edu.cn
Adobe PDF(269Kb)
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View/Download:958/286
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Submit date:2010/04/11
Quantum Dots
Exciton
Photoluminescence
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
会议论文
JOURNAL OF LUMINESCENCE, Shanghai, PEOPLES R CHINA, AUG 01-05, 2005
Authors:
Wang FZ
;
Chen ZH
;
Sun J
;
Bai LH
;
Huang SH
;
Xiong H
;
Jin P
;
Wang ZG
;
Shen SC
;
Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
Adobe PDF(269Kb)
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View/Download:1289/293
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Submit date:2010/03/29
Quantum Dots
Cleaved-edge overgrowth of aligned InAs islands on GaAs(110)
期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 11, 页码: 2661-2664
Authors:
Cui CX
;
Chen YH
;
Zhao C
;
Jin P
;
Shi GX
;
Wang YL
;
Xu B
;
Wang ZG
;
Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(347Kb)
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View/Download:1006/320
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Submit date:2010/03/17
Quantum Dots
Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
Authors:
Cui CX
;
Chen YH
;
Zhang CL
;
Jin P
;
Xu B
;
Shi GX
;
Zhao C
;
Wang ZG
;
Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(598Kb)
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View/Download:1014/313
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Submit date:2010/03/29
Quantum Dots
The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
Authors:
Zhang ZY
;
Jin P
;
Li CM
;
Ye XL
;
Meng XQ
;
Xu B
;
Liu FQ
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(182Kb)
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View/Download:1195/327
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Submit date:2010/08/12
Low Dimensional Structures
Nanostructures
Quantum Dots
Molecular Beam Epitaxy
Semiconducting Iii-v Materials
Laser Diode
Time-resolved Photoluminescence
A novel application to quantum dot materials to the active region of superluminescent diodes
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:
Zhang ZY
;
Meng XQ
;
Jin P
;
Li CM
;
Qu SC
;
Xu B
;
Ye XL
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(195Kb)
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View/Download:1012/369
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Submit date:2010/08/12
Atomic Force Microscopy
Low Dimensional Structures
Quantum Dots
Strain
Molecular Beam Epitaxy
Superluminescent Diodes
1.3 Mu-m
High-power
Integrated Absorber
Inas Islands
Spectrum
Window
Layer
Size
Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 3-4, 页码: 432-438
Authors:
Meng XQ
;
Xu B
;
Jin P
;
Ye XL
;
Zhang ZY
;
Li CM
;
Wang ZG
;
Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)
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View/Download:858/270
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Submit date:2010/08/12
Low Dimensional Structures
Molecular Beam Epitaxy
Quantum Dots
Semiconducting Iii-v Materials
Photoluminescence