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The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
Authors:  Zhang ZY;  Jin P;  Li CM;  Ye XL;  Meng XQ;  Xu B;  Liu FQ;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(182Kb)  |  Favorite  |  View/Download:1167/327  |  Submit date:2010/08/12
Low Dimensional Structures  Nanostructures  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diode  Time-resolved Photoluminescence  
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:  Zhang ZY;  Meng XQ;  Jin P;  Li CM;  Qu SC;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(195Kb)  |  Favorite  |  View/Download:989/369  |  Submit date:2010/08/12
Atomic Force Microscopy  Low Dimensional Structures  Quantum Dots  Strain  Molecular Beam Epitaxy  Superluminescent Diodes  1.3 Mu-m  High-power  Integrated Absorber  Inas Islands  Spectrum  Window  Layer  Size  
Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 3-4, 页码: 432-438
Authors:  Meng XQ;  Xu B;  Jin P;  Ye XL;  Zhang ZY;  Li CM;  Wang ZG;  Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)  |  Favorite  |  View/Download:839/270  |  Submit date:2010/08/12
Low Dimensional Structures  Molecular Beam Epitaxy  Quantum Dots  Semiconducting Iii-v Materials  Photoluminescence  
A novel line-order of InAs quantum dots on GaAs 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 241, 期号: 1-2, 页码: 69-73
Authors:  Meng XQ;  Jin P;  Xu B;  Li CM;  Zhang ZY;  Wang ZG;  Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(184Kb)  |  Favorite  |  View/Download:1134/307  |  Submit date:2010/08/12
Low Dimensional Structures  Strain  Molecular Beam Epitaxy  Quantum Dots  Semiconducting Iii-v Materials  Shape Transition  Photoluminescence  Fabrication  Deposition  Wires  Situ  
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 241, 期号: 3, 页码: 304-308
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Li DB;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(142Kb)  |  Favorite  |  View/Download:916/340  |  Submit date:2010/08/12
Atomic Force Microscopy  Low Dimensional Structures  Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diodes  Temperature-dependence  Threshold Current  Mu-m  Lasers