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中国科学院半导体研究所机构知识库
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Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices
期刊论文
JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 123, 期号: 5, 页码: 053102
Authors:
Zhibo Li
;
Mengqi Wang
;
Xin Fang
;
Yajie Li
;
Xuliang Zhou
;
Hongyan Yu
;
Pengfei Wang
;
Wei Wang
;
Jiaoqing Pan
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Submit date:2019/11/15
Measurement of the Overhauser field in a two-dimensional electron system at weak magnetic fields
期刊论文
JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 124, 期号: 16, 页码: 163909
Authors:
Xuan Qian; Yang Ji
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Submit date:2019/11/12
Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001)
期刊论文
JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102
Authors:
Z. Fu
;
Z. G. Yin
;
X. W. Zhang
;
N. F. Chen
;
Y. J. Zhao
;
Y. M. Bai
;
D. Y. Zhao
;
H. F. Zhang
;
Y. D. Yuan
;
Y. N. Chen
;
J. L. Wu
;
J. B. You
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Submit date:2018/05/30
Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach
期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 118, 期号: 16, 页码: 107403
Authors:
Wenqi Huang
;
Buwen Cheng
;
Chunlai Xue
;
Zhi Liu
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Submit date:2016/03/22
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness
期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:
J. Yang
;
D. G. Zhao
;
D. S. Jiang
;
P. Chen
;
J. J. Zhu
;
Z. S. Liu
;
L. C. Le
;
X. J. Li
;
X. G. He
;
J. P. Liu
;
H. Yang
;
Y. T. Zhang
;
G. T. Du
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Submit date:2016/03/23
Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells
期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 015302
Authors:
J.L. Yu
;
S.Y. Cheng
;
Y.F. Lai
;
Q. Zheng
;
Y.H. Chen
;
C.G. Tang
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Submit date:2016/03/23
Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure
期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 1, 页码: 014304
Authors:
P. Y. Zhou
;
X. F. Wu
;
K. Ding
;
X. M. Dou
;
G. W. Zha
;
H. Q. Ni
;
Z. C. Niu
;
H. J. Zhu
;
D. S. Jiang
;
C. L. Zhao
;
B. Q. Sun
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Submit date:2016/03/29
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 073101
Authors:
Panpan Li
;
Hongjian Li
;
Zhi Li
;
Junjie Kang
;
Xiaoyan Yi
;
Jinmin Li
;
Guohong Wang
Adobe PDF(2077Kb)
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Submit date:2016/04/15
Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures
期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 4, 页码: 043702
Authors:
Jin, DD
;
Wang, LS
;
Yang, SY
;
Zhang, LW
;
Li, HJ
;
Zhang, H
;
Wang, JX
;
Xiang, RF
;
Wei, HY
;
Jiao, CM
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
Adobe PDF(696Kb)
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View/Download:541/118
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Submit date:2015/03/20
Spin polarization in one dimensional ring with Rashba spin-orbit interaction
期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 4, 页码: 044313
Authors:
Liu, DY
;
Xia, JB
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Submit date:2015/03/20