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Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices 期刊论文
JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 123, 期号: 5, 页码: 053102
Authors:  Zhibo Li;   Mengqi Wang;   Xin Fang;   Yajie Li;   Xuliang Zhou;   Hongyan Yu;   Pengfei Wang;   Wei Wang;   Jiaoqing Pan
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Measurement of the Overhauser field in a two-dimensional electron system at weak magnetic fields 期刊论文
JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 124, 期号: 16, 页码: 163909
Authors:  Xuan Qian; Yang Ji
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Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102
Authors:  Z. Fu;  Z. G. Yin;  X. W. Zhang;  N. F. Chen;  Y. J. Zhao;  Y. M. Bai;  D. Y. Zhao;  H. F. Zhang;  Y. D. Yuan;  Y. N. Chen;  J. L. Wu;  J. B. You
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Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 118, 期号: 16, 页码: 107403
Authors:  Wenqi Huang;  Buwen Cheng;  Chunlai Xue;  Zhi Liu
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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  H. Yang;  Y. T. Zhang;  G. T. Du
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Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 015302
Authors:  J.L. Yu;  S.Y. Cheng;  Y.F. Lai;  Q. Zheng;  Y.H. Chen;  C.G. Tang
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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 1, 页码: 014304
Authors:  P. Y. Zhou;  X. F. Wu;  K. Ding;  X. M. Dou;  G. W. Zha;  H. Q. Ni;  Z. C. Niu;  H. J. Zhu;  D. S. Jiang;  C. L. Zhao;  B. Q. Sun
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Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 073101
Authors:  Panpan Li;  Hongjian Li;  Zhi Li;  Junjie Kang;  Xiaoyan Yi;  Jinmin Li;  Guohong Wang
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Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 4, 页码: 043702
Authors:  Jin, DD;  Wang, LS;  Yang, SY;  Zhang, LW;  Li, HJ;  Zhang, H;  Wang, JX;  Xiang, RF;  Wei, HY;  Jiao, CM;  Liu, XL;  Zhu, QS;  Wang, ZG
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Spin polarization in one dimensional ring with Rashba spin-orbit interaction 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 4, 页码: 044313
Authors:  Liu, DY;  Xia, JB
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