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10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 1, 页码: 261-266
Authors:  Zhao Q;  Pan JQ;  Zhang J;  Zhou GT;  Wu J;  Zhou F;  Wang BJ;  Wang LF;  Wang W;  Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: qzhao@red.semi.ac.cn
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Ultra-low-pressure  Selective Area Growth  Integrated Optoelectronics  Ultra Short Optical Pulse  Dfb Laser  
掺铒a-Si_xC_(1-x)-H薄膜的发光特性 期刊论文
中国稀土学报, 2006, 卷号: 24, 期号: 4, 页码: 395-398
Authors:  卞留芳;  张春光;  陈维德;  许振嘉;  屈玉华;  刁宏伟
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Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 3, 页码: 279-282
Authors:  Zhao H;  Xu YQ;  Ni HQ;  Zhang SY;  Han Q;  Du Y;  Yang XH;  Wu RH;  Niu ZC;  Zhao, H, Chinese Acad Sci, Inst Semicond, Natl Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: zhaohuan@red.semi.ac.cn
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Molecular-beam Epitaxy  Improved Luminescence Efficiency  Quantum-wells  Origin  
Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 31, 期号: 1, 页码: 43-47
Authors:  Cui CX;  Chen YH;  Jin P;  Xu B;  Ren YY;  Zhao C;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Patterned Substrate  Gaas  Molecular Beam Epitaxy  Nucleation Positions  Assembled Quantum Dots  Molecular-beam Epitaxy  Ge Islands  Growth  Surface  Arrays  
A high-performance Si-based MOS electrooptic phase modulator with a shunt-capacitor configuration 期刊论文
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 卷号: 24, 期号: 2, 页码: 1000-1007
Authors:  Tu XG;  Chen SW;  Zhao L;  Sun F;  Yu JZ;  Wang QM;  Tu, XG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: tuxiaog@red.semi.ac.cn;  swchen@red.semi.ac.cn;  leizhao@red.semi.ac.cn;  sun@red.semi.ac.cn;  jzyu@red.semi.ac.cn;  qmwang@red.semi.ac.cn
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Electrooptic Modulation  Metal-oxide-semiconductor (Mos) Capacitors  Modulator  Plasma Dispersion Effect  Silicon-on-insulator (Soi)  Silicon Optical Modulator  Rib Wave-guides  Thermooptical Switch  On-insulator  Soi  Efficiency  
Line defect splitters for self-collimated beams in photonic crystals 期刊论文
OPTICS COMMUNICATIONS, 2006, 卷号: 262, 期号: 1, 页码: 120-124
Authors:  Chen HB;  Li ZF;  Wei L;  Yang FH;  Feng SL;  Zheng HH;  Chen, HB, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: hbchen@semi.ac.cn;  fhyang@red.semi.ac.cn
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Photonic Crystals  Beam Splitter  Couple-mode Theory  Wave-guides  Propagation  Superprism  
Magnetism and photoluminescence in manganese-gallium oxide nanowires with monoclinic and spinel structures 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 31, 期号: 1, 页码: 67-71
Authors:  Song YP;  Wang PW;  Xu XY;  Wang Z;  Li GH;  Yu DP;  Yu, DP, Peking Univ, Dept Phys, Natl Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. E-mail: ypsong@pku.edu.cn;  yudp@pku.edu.cn
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Manganese-gallium Oxide Nanowires  Photoluminescence  Magnetization  Spinel Structure  Physical Evaporation  Ga2o3 Nanowires  Thin-film  Heterostructures  Phosphors  Growth  
Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 3, 页码: 616-618
Authors:  Wang CL;  Wang YG;  Ma XY;  Liu Y;  Sun LQ;  Tian Q;  Zang ZG;  Wang QY;  Wang, CL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: chinawygxjw@yahoo.com.cn
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Saturable Absorber  Mirror  
Symmetry restrictions in the chirality dependence of physical properties of single-wall nanotubes 期刊论文
PHYSICAL REVIEW B, 2006, 卷号: 73, 期号: 15, 页码: Art.No.155424
Authors:  Ye F;  Wang BS;  Su ZB;  Ye, F, Tsing Hua Univ, Ctr Adv Study, Beijing 100084, Peoples R China.
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Boron-nitride Nanotubes  Carbon Nanotubes  Electronic-structure  Optical-activity  
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文
JOURNAL OF RARE EARTHS, 2006, 卷号: 24, 期号: Sp.Iss.SI, 页码: 75-77
Authors:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Yang ZX;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn
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Indium Phosphide  Defect  Semi-insualting  Stimulated Current Spectroscopy  Current Transient Spectroscopy  Semi-insulating Inp  Deep-level Defects  Fe