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题名作者发表日期▼ 全文
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer [会议论文]Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP2009
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode [会议论文]Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM2008
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD [会议论文]Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM2008
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes [会议论文]Zhou, W; Yang, JL; Sun, GS; Liu, XF; Yang, FH; Li, JM2008
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 [会议论文]Yan, FW; Gao, HY; Zhang, Y; Li, JM; Zeng, YP; Wang, GH; Yang, FH2008
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 [会议论文]Wei, TB; Duan, RF; Wang, JX; Li, JM; Huo, ZQ; Zeng, YP2008
Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107 [会议论文]Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH; Yang, FH2008
Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108 [会议论文]Fan, JM; Wang, LC; Guo, JX; Yi, XY; Liu, ZQ; Wang, GH; Li, JM2008
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F [会议论文]Wei, XC; Zhao, YW; Dong, ZY; Li, JM2008
Color filter-less technology of LED back light for LCD-TV - art. no. 68410G [会议论文]Fan, MN; Liang, M; Guo, DB; Yang, FH; Wang, LC; Wang, GH; Li, JM2008

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