(Note: the search results are based on claimed items)

Browse/Search Results:  1-2 of 2 Help

Selected(0)Clear Items/Page:    Sort:
Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 257, 期号: 3-4, 页码: 321-325
Authors:  Zhang ZC;  Chen YH;  Li DB;  Zhang FQ;  Yang SY;  Ma BS;  Sun GS;  Wang ZG;  Zhang XP;  Zhang ZC,Chinese Acad Sci,Lab Semicond Mat Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(332Kb)  |  Favorite  |  View/Download:1101/371  |  Submit date:2010/08/12
Substrate  Heteroepitaxy  Low Pressure Chemical Vapor Deposition  Semiconducting Silicon Carbide  Compliant Substrate  Critical Thickness  Silicon  Relaxation  Mechanism  Defects  Layers  
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
Authors:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang XH;  Zhang Z;  Wang ZG;  Li DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(249Kb)  |  Favorite  |  View/Download:979/314  |  Submit date:2010/08/12
Nanostructures  Stretched Exponential  Time-resolved Photolummescence  Metalorganic Vapor Phase Epitaxy  Nitrides  Inalgan  Inxalyga1-x-yn Quaternary Alloys  Time-resolved Photoluminescence  Multiple-quantum Wells  Alingan/gan Heterostructures  Gan  Decay  Luminescence  Sapphire  Devices  Silicon