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Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Miao, ZH (Miao, Zhenhua);  Gong, Z (Gong, Zheng);  Fang, ZD (Fang, Zhidan);  Niu, ZC (Niu, Zhichuan);  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)  |  收藏  |  浏览/下载：1421/291  |  提交时间：2010/03/29
Atomic Hydrogen  Molecular Beam Epitaxy  Step Arrays  Molecular-beam Epitaxy  Atomic-hydrogen  Vicinal Surface  Quantum Dots  Growth  Temperature  Irradiation  Mechanism  Mbe  
Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Gong, M (Gong, Meng);  Fang, ZD (Fang, Zhidan);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1274/288  |  提交时间：2010/03/29
Surface Morphology Evolution  Inas Nanostructures  Island-pit Pairs  Molecular-beam Epitaxy  Quantum Dots  Cooperative Nucleation  Heteroepitaxy  Transition  Islands  Growth  
The plasmon resonance absorption of Ag/SiO2 nanocomposite films 会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Yang L;  Liu YL;  Wang QM;  Shi HZ;  Li GH;  Zhang LD;  Yang L Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(111Kb)  |  收藏  |  浏览/下载：1143/257  |  提交时间：2010/11/15
Ag/sio2 Nanocomposite Film  Plasmon Resonance Absorption  Mie Theory  Surface Resonance State  Quantum Size Effect  Image-potential States  Optical-properties  Surfaces  Lifetimes  Particles  Electron  Ag  
Fabrication of 1.3 mu m Si-based MEMS tunable optical filter 会议论文
MEMS/MOEMS TECHNOLOGIES AND APPLICATIONS, 4928, SHANGHAI, PEOPLES R CHINA, OCT 17-18, 2002
作者:  Zuo YH;  Huang CJ;  Cheng BW;  Mao RW;  Luo LP;  Gao JH;  Bai YX;  Wang LC;  Yu JZ;  Wang QM;  Zuo YH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(158Kb)  |  收藏  |  浏览/下载：1387/342  |  提交时间：2010/10/29
Fabry-perot  Tunable Filter  Surface Micromaching  Cavity  
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Ye XL;  Chen YH;  Xu B;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1052/220  |  提交时间：2010/11/15
Reflectance-difference Spectroscopy  Indium Segregation  Ingaas/gaas Quantum Wells  Epitaxy-grown Ingaas/gaas  Surface Segregation  Interface  
16-channel 0.35 mu m CMOS/VCSEL optoelectronic devices 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Chen HD;  Mao LH;  Jun T;  Kun L;  Yun D;  Huang YZ;  Wu RH;  Jun F;  Ke XM;  Liu HY;  Wang Z;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(418Kb)  |  收藏  |  浏览/下载：1697/269  |  提交时间：2010/10/29
Vcsel  Cmos  Mcm  Optoelectronic Integration  Smart Pixels  Optical Interconnects  Surface-emitting Lasers  Vlsi  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：1180/219  |  提交时间：2010/11/15
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zheng LX;  Xie MH;  Xu SJ;  Cheung SH;  Tong SY;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(193Kb)  |  收藏  |  浏览/下载：1124/243  |  提交时间：2010/11/15
Surface Processes  Molecular Beam Epitaxy  Nitrides  Semiconducting Gallium Compounds  Gan(0001) Surfaces  Reconstructions  
VCSEL based optoelectronic multiple chip modules 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Chen HD;  Liang K;  Du Y;  Huang YZ;  Tiang J;  Ma XY;  Wu RH;  Li SY;  Guo WL;  Xu GJ;  Wang Y;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(129Kb)  |  收藏  |  浏览/下载：1354/289  |  提交时间：2010/10/29
Vcsel  Photodetector  Cmos  Mcm  Optoelectronic Integration  Optical Interconnects  Surface-emitting Lasers  Mqw Modulators  Integration  Circuits  Vlsi  
Cooperative spontaneous emission of excitons in the semiconductor microcavity 会议论文
VERTICAL-CAVITY SURFACE-EMITTING LASERS IV, 3946, SAN JOSE, CA, JAN 26-28, 2000
作者:  Liu S;  Lin SM;  Wang QM;  Liu S Chinese Academe Inst Semicond Natl Optoelect Integrat Lab Beijing 100083 Peoples R China.
Adobe PDF(237Kb)  |  收藏  |  浏览/下载：1065/217  |  提交时间：2010/10/29
Spontaneous Emission  Microcavity Anisotropy  Polarized Exciton  Surface-emitting Lasers  Polariton Photoluminescence  Cavity  Operation