中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共2条，第1-2条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
无权访问的条目 期刊论文
作者:  Chen Q (Chen Qin);  Hu YH (Hu Yong-Hong);  Huang YZ (Huang Yong-Zhen);  Du Y (Du Yun);  Fan ZC (Fan Zhong-Chao);  Chen, Q, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: chenqin@red.semi.ac.cn;  huyh@red.serm.ac.cn;  yzhuang@red.semi.ac.cn;  duyun@red.semi.ac.cn;  zcfan@semi.ac.cn
Adobe PDF(1436Kb)  |  收藏  |  浏览/下载：943/249  |  提交时间：2010/03/29
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  收藏  |  浏览/下载：1393/222  |  提交时间：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide