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The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Ran, JX;  Wang, XL;  Hu, GX;  Li, JP;  Wang, JX;  Wang, CM;  Zeng, YP;  Li, JM;  Ran, JX, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(202Kb)  |  收藏  |  浏览/下载：1626/528  |  提交时间：2010/03/29
Aln  Impurities  Donor  
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Gao, X;  Li, JM;  Sun, GS;  Zhang, NH;  Wang, L;  Zhao, WS;  Zeng, YP;  Gao, X, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1172Kb)  |  收藏  |  浏览/下载：1121/196  |  提交时间：2010/03/29
Si(111)  Aln  
MOCVD growth of high quality crack-free GaN on Si(III) substrates 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Zhang BS;  Zhu JJ;  Wang YT;  Yang H;  Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1359/302  |  提交时间：2010/10/29
Vapor-phase Epitaxy  Layers  Aln