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Transparent and Light-Emitting Epoxy Super-Nanocomposites Containing ZnO-QDs/SiO2 Nanocomposite Particles as Encapsulating Materials for Solid-State Lighting 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 卷号: 112, 期号: 47, 页码: 18616-18622
Authors:  Li YQ;  Yang Y;  Fu SY;  Yi XY;  Wang LC;  Chen HD;  Fu, SY, Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China. 电子邮箱地址: syfu@mail.ipc.ac.cn
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Zno Nanoparticles  
Preparation of self-supporting hierarchical nanostructured anatase/rutile composite TiO2 film 期刊论文
CHEMICAL COMMUNICATIONS, 2008, 期号: 28, 页码: 3293-3295
Authors:  Sun CH;  Wang NX;  Zhou SY;  Hu XJ;  Chen P;  Zhou, SY, Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China. 电子邮箱地址: chenlab@mail.ipc.ac.cn;  zhou_shuyun@mail.ipc.ac.cn
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Low-temperature  
Growth temperature dependences of InN films grown by MOCVD 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 3149-3152 Part 2
Authors:  Yang, CB;  Wang, XL;  Xiao, HL;  Zhang, XB;  Hua, GX;  Ran, JX;  Wang, CM;  Li, JP;  Li, JM;  Wang, ZG;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn
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Inn  Mocvd  Mobility  
Hybrid bulk heterojunction solar cells from a blend of poly(3-hexylthiophene) and TiO2 nanotubes 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 1916-1920 Part 1
Authors:  Wang, ZJ;  Qu, SC;  Zeng, XB;  Liu, JP;  Zhang, CS;  Tan, FR;  Jin, L;  Wang, ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsc@semi.ac.cn
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Bulk Heterojunction  Solar Cells  Tio2 Nanotubes  Dye Sensitized Tio2 Nanotubes  Organic/inorganic Hybrid  
First-principles study on rutile TiO2 quantum dots 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 卷号: 112, 期号: 36, 页码: 13964-13969
Authors:  Peng, HW;  Li, JB;  Li, SS;  Xia, JB;  Li, JB, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jbli@semi.ac.cn
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Titanium-dioxide  Surface  
High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 3350-3353 Part 2
Authors:  Shang JZ;  Zhang BP;  Wu CM;  Cai LE;  Zhang JY;  Yu JZ;  Wang QM;  Zhang, BP, Xiamen Univ, Dept Phys, 422 SiMing Rd S, Xiamen 361005, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn
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Xps  
Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 2660-2664 Part 2
Authors:  Zhou ZW;  Cai ZM;  Li C;  Lai HK;  Chen SY;  Yu JZ;  Li, C, Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, 422 S Siming Rd, Xiamen 361005, Fujian, Peoples R China. 电子邮箱地址: lich@xmu.edu.cn;  jzyu@red.semi.ac.cn
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Relaxed Buffer  
Annihilation of deep level defects in InP through high temperature annealing 期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 卷号: 69, 期号: 39847, 页码: 551-554
Authors:  Zhao, YW;  Dong, ZY;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Defect  
New observations on the pressure dependence of luminescence from Eu2+-doped MF2 (M = Ca, Sr, Ba) fluorides 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY A, 2008, 卷号: 112, 期号: 21, 页码: 4772-4777
Authors:  Su FH;  Chen W;  Ding, K;  Li GH;  Chen, W, Univ Texas Arlington, Dept Phys, POB 19059, Arlington, TX 76019 USA. 电子邮箱地址: weichen@uta.edu;  ghli@red.semi.ac.cn
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X-ray-diffraction  
A low-cost CMOS programmable temperature 期刊论文
SENSORS, 2008, 卷号: 8, 期号: 5, 页码: 3150-3164
Authors:  Li, YL;  Wu, NJ;  Wu, NJ, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: nanjian@red.semi.ac.cn
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Temperature Switch  Floating Gate Neural Mos  Threshold Temperature  Process Compensation