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Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4, 页码: Art. No. 041901
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Wang H;  Zhang SM;  Wang YT;  Yang H;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Edge Dislocations  Gallium Compounds  Iii-v Semiconductors  Impurities  Photoluminescence  Semiconductor Doping  Semiconductor Thin Films  Silicon  Wide Band Gap Semiconductors  X-ray Diffraction  
Electron spin relaxation by nuclei and holes in single InAs quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 22, 页码: Art.No.221903
Authors:  Dou XM;  Chang XY;  Sun BQ;  Xiong YH;  Niu ZC;  Ni HQ;  Jiang DS;  Dou, XM, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: bqsun@semi.ac.cn
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Electron Spin Polarisation  
Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 84, 期号: 11, 页码: 1859-1861
Authors:  Ramsteiner M;  Jiang DS;  Harris JS;  Ploog KH;  Ramsteiner, M, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址: mer@pdi-berlin.de
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1.3 Mu-m  
Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 20, 页码: 4149-4151
Authors:  Zheng XH;  Jiang DS;  Johnson S;  Zhang YH;  Zheng XH,Chinese Acad Sci,Inst Phys,POB 603,Beijing 100080,Peoples R China.
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1.3-mu-m Vcsels  Gaas  Superlattices  
Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 15, 页码: 2217-2219
Authors:  Pan Z;  Li LH;  Lin YW;  Sun BQ;  Jiang DS;  Ge WK;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Ingaasn  Laser  Operation  Alloys  Growth  Gaas  
Quantum dots in glass spherical microcavity 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 79, 期号: 2, 页码: 153-155
Authors:  Jia R;  Jiang DS;  Tan PH;  Sun BQ;  Jia R,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Surface  
Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures 期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 76, 期号: 20, 页码: 2862-2864
Authors:  Sun BQ;  Jiang DS;  Luo XD;  Xu ZY;  Pan Z;  Li LH;  Wu RH;  Sun BQ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Alloys  Gaasn  Nitrogen  Photoluminescence  Localization  Spectroscopy  
Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 77, 期号: 25, 页码: 4148-4150
Authors:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Gaasn  
Photovoltaic effect of cubic GaN/GaAs(100) 期刊论文
APPLIED PHYSICS LETTERS, 1999, 卷号: 75, 期号: 24, 页码: 3823-3825
Authors:  Zhao DG;  Jiang DS;  Yang H;  Zheng LX;  Xu DP;  Li JB;  Wang QM;  Zhao DG,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,POB 912,Beijing 100083,Peoples R China.
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Gan  
Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 1998, 卷号: 73, 期号: 18, 页码: 2657-2659
Authors:  Sun BQ;  Lu ZD;  Jiang DS;  Wu JQ;  Xu ZY;  Wang YQ;  Wang JN;  Ge WK;  Sun BQ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China. 电子邮箱地址: bqsun@red.semi.ac.cn
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Carrier Relaxation  Excited-states  Electroreflectance