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Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 2, 页码: Art. No. 023104
Authors:  Zhang LQ;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Zhang SM;  Yang H;  Zhang LQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: lqzhang@semi.ac.cn;  hyang@red.semi.ac.cn
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Aluminium Compounds  Claddings  Gallium Compounds  Iii-v Semiconductors  Indium Compounds  Quantum Well Lasers  Refractive Index  Waveguide Lasers  
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2, 页码: Art. No. 026102
Authors:  Sun X;  Jiang DS;  Liu WB;  Zhu JH;  Wang H;  Liu ZS;  Zhu JJ;  Wang YT;  Zhao DG;  Zhang SM;  You LP;  Ma RM;  Yang H;  Sun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: xiansun@semi.ac.cn;  dsjiang@red.semi.ac.cn
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Light-emitting-diodes  Fundamental-band Gap  Nanowires  Heterostructures  Nanostructures  Mocvd  Polar