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High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文
GAN AND RELATED ALLOYS-2002, 743, BOSTON, MA, DEC 02-06, 2002
作者:  Wang JX;  Wang XL;  Sun DZ;  Li JM;  Zeng YP;  Hu GX;  Liu HX;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1712/427  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Ion-scattering Spectroscopy  Lattice Polarity  Single-crystals  Films  Polarization  Gan(0001)  Surfaces  Growth  Diodes  
The influence of oxygen content on photoluminescence from Er-doped SiOx 会议论文
LUMINESCENT MATERIALS, 560, SAN FRANCISCO, CA, APR 05-08, 1999
作者:  Chen WD;  Liang JJ;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：791/0  |  提交时间：2010/10/29
High temperature annealing behaviors of luminescent SIOx : H films 会议论文
LUMINESCENT MATERIALS, 560, SAN FRANCISCO, CA, APR 05-08, 1999
作者:  Ma ZX;  Xiang XB;  Sheng SR;  Liao XB;  Shao CL;  Umeno M;  Ma ZX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
收藏  |  浏览/下载：934/0  |  提交时间：2010/10/29
Raman-spectra  Silicon  Photoluminescence  
Influence of open-tube Ga diffusion on the characteristics for thyristor 会议论文
POWER SEMICONDUCTOR MATERIALS AND DEVICES, 483, BOSTON, MA, DEC 01-04, 1997
作者:  Wen RM;  Pei SH;  Wen RM Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(210Kb)  |  收藏  |  浏览/下载：1148/325  |  提交时间：2010/10/29
The role of hydrogen in semi-insulating INP 会议论文
HYDROGEN IN SEMICONDUCTORS AND METALS, 513, SAN FRANCISCO, CA, APR 13-17, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Qian JJ;  Chen YH;  Wang ZG;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：986/0  |  提交时间：2010/10/29
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文
ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523, SAN FRANCISCO, CA, APR 15-16, 1998
作者:  Wang HM;  Zeng YP;  Pan L;  Zhou HW;  Zhu ZP;  Kong MY;  Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1119Kb)  |  收藏  |  浏览/下载：866/155  |  提交时间：2010/10/29