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Pressure behavior of deep centers in ZnSxTe1-x alloys 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 211 (1), THESSALONIKI, GREECE, AUG 09-13, 1998
作者:  Liu NZ;  Li GH;  Zhang W;  Zhu ZM;  Han HX;  Wang ZP;  Ge WK;  Sou IK;  Liu NZ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1157/186  |  提交时间：2010/11/15
Absorption-edge  Strains  Zns  
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 426 (1), FLORENCE, ITALY, MAR 04-06, 1998
作者:  Li Z;  Dezilllie B;  Eremin V;  Li CJ;  Verbitskaya E;  Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1539/327  |  提交时间：2010/11/15
Strip Detectors  Silicon Detectors  Annealing  Simulation  Irradiation  N-eff  Junction Detectors  Radiation-damage  Models  
Fe-57 Mossbauer spectroscopic and magnetic studies of R3Fe29-xVx (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) 会议论文
HYPERFINE INTERACTIONS, 121 (1-8), DURBAN, SOUTH AFRICA, AUG 23-28, 1998
作者:  Nagamine LCCM;  Baggio-Saitovitch E;  Azevedo IS;  Han XF;  Lin LY;  Rechenberg R;  Nagamine LCCM Ctr Brasileiro Pesquisas Fis Rua Dr Xavier Sigaud 150 Rio De Janeiro Brazil.
Adobe PDF(64Kb)  |  收藏  |  浏览/下载：1256/235  |  提交时间：2010/11/15
Nitride  Cr  
Si-based optoelectronic devices and their attractive applications 会议论文
CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5), PRAGUE, CZECH REPUBLIC, JUN 15-17, 1998
作者:  Wang QM;  Yang QQ;  Zhu YQ;  Si JJ;  Liu YL;  Lei HB;  Cheng BW;  Yu JZ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(570Kb)  |  收藏  |  浏览/下载：1215/280  |  提交时间：2010/11/15
AlGaInP visible quantum well lasers for information technology 会议论文
CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5), PRAGUE, CZECH REPUBLIC, JUN 15-17, 1998
作者:  Yu JZ;  Chen LH;  Ma XY;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(272Kb)  |  收藏  |  浏览/下载：1269/401  |  提交时间：2010/11/15
High-power Operation  Diodes  
InP-based optoelectronic devices for optical fiber communications 会议论文
CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5), PRAGUE, CZECH REPUBLIC, JUN 15-17, 1998
作者:  Luo Y;  Chen LH;  Li TN;  Luo Y Tsing Hua Univ Dept Elect Engn State Key Lab Integrated Optoelect Beijing 100084 Peoples R China.
Adobe PDF(265Kb)  |  收藏  |  浏览/下载：1152/346  |  提交时间：2010/11/15
Feedback Semiconductor-lasers  
New way to enhance the uniformity of self-organized InAs quantum dots 会议论文
COMPOUND SEMICONDUCTORS 1998, (162), NARA, JAPAN, OCT 12-16, 1998
作者:  Zhu HJ;  Wang H;  Wang ZM;  Cui LQ;  Feng SL;  Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(312Kb)  |  收藏  |  浏览/下载：1073/173  |  提交时间：2010/11/15
Molecular-beam Epitaxy  Threshold  Growth  Laser  
Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots 会议论文
PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSTRUCTURES, 98 (19), BOSTON, MA, NOV 02-05, 1998
作者:  Zhu HJ;  Wang ZM;  Sun BQ;  Feng SL;  Jiang DS;  Zheng HZ;  Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：855/0  |  提交时间：2010/10/29