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Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 2, 页码: Art. No. 023104
Authors:  Zhang LQ;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Zhang SM;  Yang H;  Zhang LQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: lqzhang@semi.ac.cn;  hyang@red.semi.ac.cn
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Aluminium Compounds  Claddings  Gallium Compounds  Iii-v Semiconductors  Indium Compounds  Quantum Well Lasers  Refractive Index  Waveguide Lasers  
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2, 页码: Art. No. 026102
Authors:  Sun X;  Jiang DS;  Liu WB;  Zhu JH;  Wang H;  Liu ZS;  Zhu JJ;  Wang YT;  Zhao DG;  Zhang SM;  You LP;  Ma RM;  Yang H;  Sun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: xiansun@semi.ac.cn;  dsjiang@red.semi.ac.cn
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Light-emitting-diodes  Fundamental-band Gap  Nanowires  Heterostructures  Nanostructures  Mocvd  Polar  
Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 10, 页码: Art. No. 103716
Authors:  Chang XY;  Dou XM;  Sun BQ;  Xiong YH;  Niu ZC;  Ni HQ;  Jiang DS;  Chang, XY, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. E-mail Address: bqsun@semi.ac.cn
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Fine-structure  Trion  
Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 9, 页码: Art.No.094302
Authors:  Bian LF;  Zhang CG;  Chen WD;  Hsu CC;  Qu YH;  Jiang DS;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. E-mail: guobian@semi.ac.cn
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Room-temperature  Silicon  Semiconductors  Dislocations  Spectra  
Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 7, 页码: Art.No.073517
Authors:  Lu SL;  Jiang DS;  Dai JM;  Yang CL;  He HT;  Ge WK;  Wang JN;  Chang K;  Zhang JY;  Shen DZ;  Wang, JN, Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Hong Kong, Peoples R China. E-mail: phjwang@ust.hk
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Quantum Dots  Exchange Interaction  Magnetic-fields  Zn1-xmnxse  Znmnse  Excitons  
Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 95, 期号: 2, 页码: 752-754
Authors:  Chang K;  Jiang DS;  Xia JB;  Chang, K, Chinese Acad Sci, Inst Semicond, NLSM, POB 912, Beijing 100083, Peoples R China.
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Photoluminescence  
InxGa1-xAs/AlyGa1-yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength infrared detectors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 7, 页码: 3437-3441
Authors:  Wu WG;  Chang K;  Jiang DS;  Li YX;  Zheng HZ;  Liu HC;  Wu WG,Univ Calif Los Angeles,Dept Elect Engn,Los Angeles,CA 90095 USA.
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Applied Electric-field  Intersubband Transitions  Multiquantum Wells  Photodetectors  
Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 85, 期号: 8 Part 1, 页码: 4259-4261
Authors:  Wu JQ;  Jiang DS;  Sun BQ;  Liu ZHX;  Wu JQ,Chinese Acad Sci,Inst Semicond,Natl lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Gaas-alas Superlattices  Carrier Transport  Oscillations  Domains  State  
Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 1998, 卷号: 84, 期号: 11, 页码: 6466-6468
Authors:  Zhao MS;  Dai ZX;  Li GH;  Wang RZ;  Jiang DS;  Zhao MS,Qufu Normal Univ,Laser Res Inst,Shandong 273165,Peoples R China. 电子邮箱地址: mszhao@ji-public.sd.cninfo.net
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Semiconductors  Spectroscopy