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锑化物HEMT器件研究进展 期刊论文
功能材料与器件学报, 2011, 卷号: 17, 期号: 1, 页码: 29-35
Authors:  李彦波;  刘超;  张杨;  曾一平
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Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.73703
Authors:  Li YB;  Zhang Y;  Zeng YP;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.;
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Acoustic-phonon-scattering  Low-power Applications  Transport-properties  Interface Roughness  Inas/alsb Hemts  Heterostructures  Inas  Transistors  Gas  Layers  
锑化物超晶格红外探测器的研究进展 期刊论文
固体电子学研究与进展, 2010, 卷号: 30, 期号: 1, 页码: 40864
Authors:  李彦波;  刘超;  张杨;  赵杰;  曾一平
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An efficient dose-compensation method for proximity effect correction 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 8, 页码: 86001-1-86001-4
Authors:  Wang Ying;  Han Weihua;  Yang Xiang;  Zhang Renping;  Zhang Yang;  Yang Fuhua
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InP-base resonant tunneling diodes 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 48-50
Authors:  Han Chunlin;  Chen Chen;  Zou Penghui;  Zhang Yang;  Zeng Yiping;  Xue Fangshi;  Gao Jianfeng;  Zhang Zheng;  Geng Tao
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Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths 期刊论文
CHINESE PHYSICS B, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647
Authors:  Zhang Y;  Zeng YP;  Zhang Y Beijing Technol & Business Univ Internship Ctr Business & Law Beijing 102488 Peoples R China. E-mail Address:
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Resonant Tunnelling Diode  Molecular Beam Epitaxy  
Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 6, 页码: 1057-1061
Authors:  Yang Xiang;  Han Weihua;  Wang Ying;  Zhang Yang;  Yang Fuhua
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A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1654-1656
Authors:  Chen Zhigang;  Zhang Yang;  Luo Weijun;  Zhang Renping;  Yang Fuhua;  Wang Xiaoliang;  Li Jinmin
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高性能InGaAs/AlAs共振隧穿二极管的研制与器件模拟分析 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 563-566
Authors:  马龙;  张杨;  戴扬;  杨富华;  曾一平;  王良臣
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Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
CHINESE PHYSICS, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
Authors:  Zhang Y;  Zeng YP;  Ma L;  Wang BQ;  Zhu ZP;  Wang LC;  Yang FH;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
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Resonant Tunnelling Diode  Inp Substrate  Molecular Beam Epitaxy  High Resolution Transmission Electron Microscope  Current-voltage Characteristics  Intrinsic Bistability  Circuit