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二维GaAs基光子晶体微腔的制作与光谱特性分析 期刊论文
物理学报, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077
Authors:  彭银生;  叶小玲;  徐波;  牛洁斌;  贾锐;  王占国;  梁松;  杨晓红
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Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 5, 页码: Art. No. 055310
Authors:  Liang S;  Zhu HL;  Ye XL;  Pan JQ;  Zhao LJ;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Chemical-vapor-deposition  Multiatomic Steps  Islands  Growth  Fabrication  Epitaxy  
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
Authors:  Liang S;  Zhu HL;  Ye XL;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: liangsong@red.semi.ac.cn
Adobe PDF(232Kb)  |  Favorite  |  View/Download:1184/316  |  Submit date:2010/03/08
Photoluminescence  Metalorganic Vapor Phase Epitaxy  Self-assembled Quantum Dots  Indium Arsenide  
Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 2, 页码: 477-484
Authors:  Liang S;  Zhu HL;  Pan JQ;  Ye XL;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn
Adobe PDF(399Kb)  |  Favorite  |  View/Download:869/293  |  Submit date:2010/04/11
Bimodal Size Distribution  Metalorganic Vapor Phase Epitaxy  Self-assembled Quantum Dots  Indium Arsenide  Phase-epitaxy  Islands  Ingaas  Size  Laser