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Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes