SEMI OpenIR

Browse/Search Results:  1-10 of 30 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 卷号: 23, 期号: 1, 页码: Art. No. 015801
Authors:  Liu GH (Liu Genhua);  Chen YH (Chen Yonghai);  Jia CH (Jia Caihong);  Hao GD (Hao Guo-Dong);  Wang ZG (Wang Zhanguo);  Liu, GH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@red.semi.ac.cn
Adobe PDF(778Kb)  |  Favorite  |  View/Download:1922/501  |  Submit date:2010/12/28
Narrow-gap Semiconductor  Inversion-asymmetry  Quantum Dots  Band  States  
Effect of transverse electric field on helical edge states in a quantum spin-Hall system 期刊论文
APPLIED PHYSICS LETTERS 卷: 99 期: 22 文献号: 222111, 2011, 卷号: 99, 期号: 22, 页码: 222111
Authors:  Liu GH (Liu Genhua);  Zhou GH (Zhou Guanghui);  Chen YH (Chen Yong-Hai)
Adobe PDF(612Kb)  |  Favorite  |  View/Download:960/238  |  Submit date:2012/02/22
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: 463
Authors:  Li, TF;  Chen, YH;  Lei, W;  Zhou, XL;  Luo, S;  Hu, YZ;  Wang, LJ;  Yang, T;  Wang, ZG;  Chen, YH (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China,
Adobe PDF(651Kb)  |  Favorite  |  View/Download:778/153  |  Submit date:2012/02/06
Raman-scattering  Semiconducting Nanowires  Optoelectronic Devices  Phosphide Nanowires  Optical Phonons  Silicon  Crystals  Spectra  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
Adobe PDF(638Kb)  |  Favorite  |  View/Download:1169/233  |  Submit date:2012/02/06
Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Photorefractive Effect of a Liquid Crystal Cell with a ZnO Nanorod Doped in Only One PVA Layer 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 9, 页码: 96101
Authors:  Guo YB;  Chen YH;  Xiang Y;  Qu SC;  Wang ZG;  Chen, YH (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China, yhchen@semi.ac.cn
Adobe PDF(577Kb)  |  Favorite  |  View/Download:793/169  |  Submit date:2012/02/06
Luminescence  Films  
Thermal carrier processes in bimodal-sized quantum dots with different lateral coupling strength 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 3, 页码: 31903
Authors:  Zhou XL;  Chen YH;  Li TF;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China, zhouxl06@semi.ac.cn
Adobe PDF(1309Kb)  |  Favorite  |  View/Download:902/243  |  Submit date:2012/02/06
Redistribution  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(1941Kb)  |  Favorite  |  View/Download:1562/395  |  Submit date:2011/07/05
Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Authors:  Ding F;  Li B;  Akopian N;  Perinetti U;  Chen YH;  Peeters FM;  Rastelli A;  Zwiller V;  Schmidt OG;  Ding, F, IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland
Adobe PDF(3320Kb)  |  Favorite  |  View/Download:1028/251  |  Submit date:2011/07/05
Quantum Ring  Quantum Dot  Neutral Exciton  Aharonov Bohm Effect  Gate Controlled  Selective Etching  Energy-spectra  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(2010Kb)  |  Favorite  |  View/Download:1367/281  |  Submit date:2011/07/05
Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: Article no.245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D, Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China. rzhang@nju.edu.cn
Adobe PDF(638Kb)  |  Favorite  |  View/Download:1807/425  |  Submit date:2011/07/05
Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd