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Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 卷号: 23, 期号: 1, 页码: Art. No. 015801
Authors:  Liu GH (Liu Genhua);  Chen YH (Chen Yonghai);  Jia CH (Jia Caihong);  Hao GD (Hao Guo-Dong);  Wang ZG (Wang Zhanguo);  Liu, GH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@red.semi.ac.cn
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Narrow-gap Semiconductor  Inversion-asymmetry  Quantum Dots  Band  States  
Effect of transverse electric field on helical edge states in a quantum spin-Hall system 期刊论文
APPLIED PHYSICS LETTERS 卷: 99 期: 22 文献号: 222111, 2011, 卷号: 99, 期号: 22, 页码: 222111
Authors:  Liu GH (Liu Genhua);  Zhou GH (Zhou Guanghui);  Chen YH (Chen Yong-Hai)
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: 463
Authors:  Li, TF;  Chen, YH;  Lei, W;  Zhou, XL;  Luo, S;  Hu, YZ;  Wang, LJ;  Yang, T;  Wang, ZG;  Chen, YH (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China,
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Raman-scattering  Semiconducting Nanowires  Optoelectronic Devices  Phosphide Nanowires  Optical Phonons  Silicon  Crystals  Spectra  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 23, 页码: Art. No. 232116
Authors:  Jiang CY;  Chen YH;  Ma H;  Yu JL;  Liu Y
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Optical-properties  Dots  
Photorefractive Effect of a Liquid Crystal Cell with a ZnO Nanorod Doped in Only One PVA Layer 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 9, 页码: 96101
Authors:  Guo YB;  Chen YH;  Xiang Y;  Qu SC;  Wang ZG;  Chen, YH (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China, yhchen@semi.ac.cn
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Luminescence  Films  
Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 3, 页码: 32106
Authors:  Jiang CY;  Ma H;  Yu JL;  Liu Y;  Chen YH;  Jiang, CY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, cyjiang@semi.ac.cn;  yhchen@semi.ac.cn
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Quantum Wires  Optical-properties  Rectification  Fluctuations  
Thermal carrier processes in bimodal-sized quantum dots with different lateral coupling strength 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 3, 页码: 31903
Authors:  Zhou XL;  Chen YH;  Li TF;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China, zhouxl06@semi.ac.cn
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Redistribution  
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 5, 页码: Article no.53519
Authors:  Yu JL;  Chen YH;  Jiang CY;  Liu Y;  Ma H;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Molecular-beam Epitaxy  Inversion Asymmetry  Heterostructures  Segregation  Interface  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate