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Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 391, 页码: 111-115
Authors:  Wang, HT;  Jia, CH;  Xu, JK;  Chen, YH;  Chen, XW;  Zhang, WF
Favorite  |  View/Download:231/4  |  Submit date:2015/04/02
Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 394, 页码: 7-10
Authors:  Zhang, YH;  Wei, TB;  Wang, JX;  Fan, C;  Chen, Y;  Hu, Q;  Li, JM
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Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 311, 期号: 1, 页码: 200-204
Authors:  Jia CH;  Chen YH;  Liu GH;  Liu XL;  Yang SY;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
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Growth Behavior  Srtio3  Mocvd  Zno  
Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 494-499
Authors:  Zhao FA;  Chen YH;  Ye XL;  Xu B;  Jin P;  Wu J;  Wang ZG;  Zhang CL;  Zhao, FA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaofa@red.semi.ac.cn
Adobe PDF(369Kb)  |  Favorite  |  View/Download:1110/262  |  Submit date:2010/03/17
Nanostructures  
Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 284, 期号: 3-4, 页码: 306-312
Authors:  Wang YL;  Chen YH;  Wu J;  Lei W;  Wang ZG;  Zeng YP;  Wang, YL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: wangyli@red.semi.ac.cn
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High-resolution Transmission Electron Microscopy  
Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 284, 期号: 1-2, 页码: 20-27
Authors:  Lei W;  Chen YH;  Wang YL;  Xu B;  Ye XL;  Zeng YP;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: ahleiwen@red.semi.ac.cn
Adobe PDF(427Kb)  |  Favorite  |  View/Download:1026/294  |  Submit date:2010/03/17
Annealing  
Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 286, 期号: 1, 页码: 23-27
Authors:  Lei W;  Chen YH;  Wang YL;  Huang XQ;  Zhao C;  Liu JQ;  Xu B;  Jin P;  Zeng YP;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn
Adobe PDF(533Kb)  |  Favorite  |  View/Download:971/343  |  Submit date:2010/04/11
Defects  Lateral Composition Modulation  Photoluminescence  Molecular Beam Epitaxy  Quantum Wires  Semiconductor Iii-v Material  Dots  Heterostructures  Inalas/inp(001)  Spectroscopy  Wavelength  Inp(001)  
Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 1-2, 页码: 12-17
Authors:  Wang CH;  Chen YH;  Yu G;  Wang ZG;  Wang, CH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: afloatcloud@red.semi.ac.cn
Adobe PDF(291Kb)  |  Favorite  |  View/Download:978/338  |  Submit date:2010/03/09
Nanomaterials  
Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 257, 期号: 3-4, 页码: 321-325
Authors:  Zhang ZC;  Chen YH;  Li DB;  Zhang FQ;  Yang SY;  Ma BS;  Sun GS;  Wang ZG;  Zhang XP;  Zhang ZC,Chinese Acad Sci,Lab Semicond Mat Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(332Kb)  |  Favorite  |  View/Download:1080/371  |  Submit date:2010/08/12
Substrate  Heteroepitaxy  Low Pressure Chemical Vapor Deposition  Semiconducting Silicon Carbide  Compliant Substrate  Critical Thickness  Silicon  Relaxation  Mechanism  Defects  Layers  
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
Authors:  Zhang ZC;  Yang SY;  Zhang FQ;  Xu B;  Zeng YP;  Chen YH;  Wang ZG;  Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(165Kb)  |  Favorite  |  View/Download:896/340  |  Submit date:2010/08/12
Dislocation  Interfaces  Strain  Molecular Beam Epitaxy  Semiconductor Iiiv Materials  Molecular-beam Epitaxy  Surface-morphology  Technology  Gaas(001)  Behavior  Si