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一种改善ZnO薄膜欧姆接触的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-03-31, 2010-08-12
Inventors:  张兴旺;  蔡培锋;  游经碧;  范亚明;  高 云;  陈诺夫
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边发射二维光子晶体分布反馈量子级联激光器及制备方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-03-17, 2010-08-12
Inventors:  陆全勇;  张 伟;  王利军;  高 瑜;  尹 雯;  张全德;  刘万峰;  刘峰奇;  王占国
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利用p型掺杂的硅衬底生长高结晶质量氧化锌纳米棒的方法 专利
专利类型: 发明, 申请日期: 2009-09-23, 公开日期: 4007
Inventors:  蔡芳芳;  范海波;  张攀峰;  刘祥林 
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生长氧化锌纳米棒阵列的方法 专利
专利类型: 发明, 申请日期: 2009-05-13, 公开日期: 3994
Inventors:  范海波;  杨少延;  张攀峰;  魏鸿源;  刘祥林;  朱勤生;  陈涌海;  王占国 
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Magnetic field switching in parallel quantum dots 期刊论文
EPL, 2009, 卷号: 88, 期号: 3, 页码: Art.No.37001
Authors:  Li F (Li Feng);  Li XQ (Li Xin-Qi);  Zhang WM (Zhang Wei-Min);  Gurvitz SA (Gurvitz S. A.);  Li, F, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: Shmuel.Gurvitz@weizmann.ac.il
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Rate-equations  
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59
Authors:  Zhang ML;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Tang J;  Feng C;  Jiang LJ;  Hu GX;  Ran JX;  Wang MG;  Zhang ML Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: mlzhang@semi.ac.cn
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Algan/gan Heterostructure  Superlattices (Sls)  Root Mean Square Roughness (Rms)  Sheet Resistance  
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
SOLID-STATE ELECTRONICS, 2009, 卷号: 53, 期号: 3, 页码: 332-335
Authors:  Wang XL;  Chen TS;  Xiao HL;  Tang J;  Ran JX;  Zhang ML;  Feng C;  Hou QF;  Wei M;  Jiang LJ;  Li JM;  Wang ZG;  Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: xlwang@semi.ac.cn
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Algan/aln/gan  Hemt  Mocvd  Sic Substrate  Power Device  
Structural and Magnetic Properties of Sm Implanted GaN 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 7, 页码: Art. No. 077502
Authors:  Jiang LJ;  Wang XL;  Xiao HL;  Wang ZG;  Feng C;  Zhang ML;  Tang J;  Jiang LJ Chinese Acad Sci Novel Mat Lab Inst Semicond Beijing 100083 Peoples R China. E-mail Address: ljjiang@semi.ac.cn
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The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417
Authors:  Wu YX (Wu Yu-Xin);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Zhang SM (Zhang Shu-Ming);  Wang YT (Wang Yu-Tian);  Wang H (Wang Hui);  Chen GF (Chen Gui-Feng);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: jjzhu@red.semi.ac.cn
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Gan  
Holographic fabricated photonic-crystal distributed-feedback quantum cascade laser with near-diffraction-limited beam quality 期刊论文
OPTICS EXPRESS, 2009, 卷号: 17, 期号: 21, 页码: 18900-18905
Authors:  Lu QY (Lu, Quan-Yong);  Zhang W (Zhang, Wei);  Wang LJ (Wang, Li-Jun);  Liu JQ (Liu, Jun-Qi);  Li L (Li, Lu);  Liu FQ (Liu, Feng-Qi);  Wang ZG (Wang, Zhan-Guo);  Lu, QY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqliu@red.semi.ac.cn
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