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纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
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蓝紫光InGaN多量子阱激光器 期刊论文
中国科学. E辑, 技术科学, 2007, 卷号: 37, 期号: 3, 页码: 356-359
Authors:  李德尧;  张书明;  王建峰;  陈俊;  陈良惠;  种明;  朱建军;  赵德刚;  刘宗顺;  杨辉;  梁骏吾
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缓冲层生长压力对MOCVD GaN性能的影响 期刊论文
中国科学. E辑, 技术科学, 2004, 卷号: 34, 期号: 0, 页码: 1
Authors:  陈俊;  张书明;  张宝顺;  朱建军;  冯淦;  段俐宏;  王玉田;  杨辉;  郑文琛
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Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2003, 卷号: 46, 期号: 6, 页码: 620-626
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Duan LH;  Wang YT;  Yang H;  Zheng WC;  Chen J,Sichuan Univ,Dept Mat Sci,Chengdu 610064,Peoples R China.
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Gallium Nitride  Mocvd  In Situ Laser Reflectometry  Chemical-vapor-deposition  In-situ  Sapphire Substrate  Nucleation Layers  Films  
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Shen XM;  Feng G;  Liu JP;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowths  Surface Morphology  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  Light-emitting-diodes  Sapphire Substrate  Nucleation Layers  Quality  Temperature  
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Shen XM;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowth  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  High-quality Gan  Buffer Layer  Threading Dislocations  Temperature  Evolution  Surface  Movpe  
Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 卷号: 35, 期号: 20, 页码: 2648-2651
Authors:  Sun YP;  Shen XM;  Wang J;  Zhao DG;  Feng G;  Fu Y;  Zhang SM;  Zhang ZH;  Feng ZH;  Bai YX;  Yang H;  Sun YP,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Resistance Ohmic Contacts  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Stability  Barrier  Diodes  
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2002, 卷号: 45, 期号: 3, 页码: 255-260
Authors:  Sun YP;  Fu Y;  Qu B;  Wang YT;  Feng ZH;  Shen XM;  Zhao DG;  Zheng XH;  Duan LH;  Li BC;  Zhang SM;  Yang H;  Sun YP,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China. 电子邮箱地址: ypsun@red.semi.ac.cn
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Wafer Bonding  Cubic  Gan/gaas(001)  Si-substrate  Light-emitting-diodes  P-type Gan  Resistance  Contact  Laser  
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
Authors:  Feng ZH;  Yang H;  Zhang SM;  Duan LH;  Wang H;  Wang YT;  Feng ZH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Crystal Morphology  Doping  Surface Structure  Metalorgamc Chemical Vapor Deposition  Nitrides  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Phase Epitaxy  Films  Cathodoluminescence  
GaAs衬底生长的立方GaN晶片键合技术 期刊论文
中国科学. E辑,技术科学, 2002, 卷号: 32, 期号: 5, 页码: 584-589
Authors:  孙元平;  付羿;  渠波;  王玉田;  冯玉宏;  赵德刚;  郑新和;  段俐宏;  李秉臣;  张书明;  杨辉;  姜晓明;  郑文莉;  贾全杰
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