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一种生长可控量子点和量子环的方法 专利
专利类型: 发明, 申请日期: 2009-10-28, 公开日期: 4011
Inventors:  赵 暕;  陈涌海;  王占国;  徐 波
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控制自组织铟镓砷量子点成核的生长方法 专利
专利类型: 发明, 申请日期: 2009-09-23, 公开日期: 4007
Inventors:  梁凌燕;  叶小玲;  金 鹏;  陈涌海;  徐 波;  王占国 
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Fabrication of high quality two-dimensional photonic crystal mask layer patterns 期刊论文
OPTICAL AND QUANTUM ELECTRONICS, 2009, 卷号: 41, 期号: 3, 页码: 151-158
Authors:  Peng, YS (Peng, Yin-Sheng);  Xu, B (Xu, Bo);  Ye, XL (Ye, Xiao-Ling);  Niu, JB (Niu, Jie-Bin);  Jia, R (Jia, Rui);  Wang, ZG (Wang, Zhan-Guo);  Peng, YS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: cynthia@semi.ac.cn
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Photonic Crystal  
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 10, 页码: Art. No. 103108
Authors:  Tang CG;  Chen YH;  Xu B;  Ye XL;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
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Aluminium Compounds  Gallium Arsenide  Iii-v Semiconductors  Internal Stresses  Reflectivity  Semiconductor Heterojunctions  Semiconductor Quantum Wells  
Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
Authors:  Zhao C;  Chen YH;  Xu B;  Tang CG;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Molecular-beam Epitaxy  
Z扫描法研究nc-Si/SiN_x多量子阱材料非线性光学特性 期刊论文
半导体光电, 2009, 卷号: 30, 期号: 6, 页码: 878-882
Authors:  沈海波;  郭亨群;  王国立;  王加贤;  吴志军;  宋江婷;  徐骏;  陈坤基;  王启明
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Influence of a tilted cavity on quantum-dot optoelectronic active devices 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 37-40
Authors:  Liu Wanglai;  Xu Bo;  Liang Ping;  Hu Ying;  Sun Hong;  Lü Xueqin;  Wang Zhanguo
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SiN薄膜三阶非线性增强的研究 期刊论文
半导体技术, 2009, 卷号: 34, 期号: 5, 页码: 418-422
Authors:  宋江婷;  郭亨群;  王加贤;  吴志军;  王国立;  沈海波;  徐骏;  陈坤基;  王启明
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以二氧化硅为掩模定位生长量子点的方法 专利
专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:  任芸芸;  徐波;  周惠英;  刘明;  李志刚;  王占国
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量子点-阱红外探测器的结构及其制备方法 专利
专利类型: 发明, 申请日期: 2008-09-24, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王志成;  徐波;  刘峰奇;  陈涌海;  王占国;  石礼伟;  梁凌燕
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