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Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces 期刊论文
Nanoscale Research Letters, 2012, 卷号: 7, 页码: 160
Authors:  Li, Li-Gong;  Liu, Shu-Man;  Luo, Shuai;  Yang, Tao;  Wang, Li-Jun;  Liu, Feng-Qi;  Ye, Xiao-Ling;  Xu, Bo;  Wang, Zhan-Guo
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Smooth GaAs (110) surface fabrication using the Ga-assisted deoxidation method 期刊论文
Advanced Materials Research, 2012, 卷号: 341-342, 页码: 138-141
Authors:  Liu, Jian-Qing;  Chen, Yong-Hai;  Xu, Bo;  Wang, Zhan-Gzuo
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Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface 期刊论文
Advanced Materials Research, 2012, 卷号: 341-342, 页码: 73-76
Authors:  Liu, Jian-Qing;  Chen, Yong-Hai;  Xu, Bo;  Wang, Zhan-Guo
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Protection effect of a SiO2 layer in Al0.85Ga 0.15As wet oxidation 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 10, 页码: 102002
Authors:  Zhou, Wenfei;  Ye, Xiaoling;  Xu, Bo;  Zhang, Shizhu;  Wang, Zhanguo
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Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states 期刊论文
Journal of Applied Physics, 2011, 卷号: 109, 期号: 11, 页码: 113540
Authors:  Zhou, X.L.;  Chen, Y.H.;  Ye, X.L.;  Xu, Bo;  Wang, Z.G.;  Zhou, X. L.(zhouxl06@semi.ac.cn)
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Ground State  Photoluminescence  Quantum Efficiency  Semiconductor Quantum Dots