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Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism 期刊论文
SOLID STATE COMMUNICATIONS, 2011, 卷号: 151, 期号: 6, 页码: 456-459
Authors:  Wu H;  Gan HD;  Zheng HZ;  Lu J;  Zhu H;  Ji Y;  Li GR;  Zhao JH;  Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hdgan@riec.tohoku.ac.jp;  hzzheng@red.semi.ac.cn
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Magnetic Semiconductors  Molecular Beam Epitaxy  Magneto-optical Effects  Transport-properties  Semiconductor  (Ga  Cr)As  
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93507
Authors:  Shen C;  Wang LG;  Zheng HZ;  Zhu H;  Chen L;  Zhao JH;  Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn
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Gallium-arsenide  Semiconductors  Field  
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 10, 页码: 100301
Authors:  Wang, LG;  Shen, C;  Zheng, HZ;  Zhu, H;  Zhao, JH;  Zheng, HZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,hzzheng@red.semi.ac.cn
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Charged Acceptor Centre  Screening Effect  Exchange Interaction  Shallow Acceptor States  Gallium-arsenide  Semiconductors  Field  
External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 卷号: 115, 期号: 47, 页码: 23558-23563
Authors:  Li WW (Li W. W.);  Zhu JJ (Zhu J. J.);  Liang JR (Liang J. R.);  Hu ZG (Hu Z. G.);  Liu J (Liu J.);  Chen HD (Chen H. D.);  Chu JH (Chu J. H.)
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Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 11, 页码: 113115
Authors:  Zhu JH;  Ning JQ;  Zheng CC;  Xu SJ;  Zhang SM;  Yang H;  Zhu, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China, sjxu@hkucc.hku.hk;  hyang2006@sinano.ac.cn
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Light-emitting-diodes  Laser-diodes  Gan  Nanowires  
Influence of magnetocrystalline anisotropy on magneto-optics in GaMnAs/InGaAs epilayer 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2011, 卷号: 30, 期号: 1, 页码: 1-5
Authors:  Zhu K;  Zheng HZ;  Gan HD;  Liu JA;  Zhu H;  Zhang H;  Li GR;  Zhao JH;  Zheng, HZ, CAS, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. zhuke@semi.ac.cn;  hzzheng@red.semi.ac.cn
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Magneto-optical Effect  Oscillation  Magnetic Anisotropic  Semiconductors  (Ga  (Ga  Mn)As  Mn)As Films  
GaN 基纳米结构LED 的制作及测试分析研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  朱继红
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Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:  Zhu JH;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Qiu YX;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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Diodes  Efficiency  
Simulation of the light extraction efficiency of nanostructure light-emitting diodes 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 7, 页码: 77804
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China, smzhang@red.semi.ac.cn
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